Terahertz injection locked oscillation in plasmon-resonant transistors

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We experimentally and analytically investigated the possibility of injection locked oscillation in a plasmon-resonant dual-grating-gate high-electron mobility transistor to the difference terahertz frequency component of photomixed dual CW laser irradiation. Although the perfect injection locking has not yet been obtained the device model we newly formulate will lead to find practical solutions of successful operation.

Original languageEnglish
Title of host publicationConference Program - MOC'11
Subtitle of host publication17th Microoptics Conference
Publication statusPublished - 2011
Event17th Microoptics Conference, MOC'11 - Sendai, Japan
Duration: 2011 Oct 302011 Nov 2

Publication series

NameConference Program - MOC'11: 17th Microoptics Conference

Conference

Conference17th Microoptics Conference, MOC'11
Country/TerritoryJapan
CitySendai
Period11/10/3011/11/2

Fingerprint

Dive into the research topics of 'Terahertz injection locked oscillation in plasmon-resonant transistors'. Together they form a unique fingerprint.

Cite this