Terahertz LED based on current injection dual-gate graphene-channel field effect transistors

Deepika Yadav; Youssef Tobah; Kenta Sugawara; Junki Mitsushio; Gen Tamamushi; Takayuki Watanabe; Alexander A. Dubinov; Maxim Ryzhii; Victor Ryzhii; Taiichi Otsuji

doi:10.1109/DRC.2017.7999519

Terahertz LED based on current injection dual-gate graphene-channel field effect transistors

Deepika Yadav, Youssef Tobah, Kenta Sugawara, Junki Mitsushio, Gen Tamamushi, Takayuki Watanabe, Alexander A. Dubinov, Maxim Ryzhii, Victor Ryzhii, Taiichi Otsuji

Broadband Engineering Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Previous studies have shown that optical and/or injection pumping of graphene can enable negative-dynamic conductivity in the terahertz (THz) spectral range, which may lead to new types of THz lasers and light-emitting devices [1-4]. Recently we obtained preliminary results of single-mode THz lasing in a forward-biased graphene structure with a lateral p-i-n junction in a distributed-feedback dual-gate graphene-channel field-effect transistor (DFB-DG-GFET) [5]. In this work, we experimentally observe amplified spontaneous broadband THz emission from 1 to 7.6 THz at 100K by carrier-injection in a population-inverted DFB-DG-GFET, demonstrating the birth of a new type of THz light-emitting diodes.

Original language	English
Title of host publication	75th Annual Device Research Conference, DRC 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509063277
DOIs	https://doi.org/10.1109/DRC.2017.7999519
Publication status	Published - 2017 Aug 1
Event	75th Annual Device Research Conference, DRC 2017 - South Bend, United States Duration: 2017 Jun 25 → 2017 Jun 28

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Other

Other	75th Annual Device Research Conference, DRC 2017
Country/Territory	United States
City	South Bend
Period	17/6/25 → 17/6/28

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/DRC.2017.7999519

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Yadav, D., Tobah, Y., Sugawara, K., Mitsushio, J., Tamamushi, G., Watanabe, T., Dubinov, A. A., Ryzhii, M., Ryzhii, V., & Otsuji, T. (2017). Terahertz LED based on current injection dual-gate graphene-channel field effect transistors. In 75th Annual Device Research Conference, DRC 2017 [7999519] (Device Research Conference - Conference Digest, DRC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2017.7999519

Terahertz LED based on current injection dual-gate graphene-channel field effect transistors. / Yadav, Deepika; Tobah, Youssef; Sugawara, Kenta et al.
75th Annual Device Research Conference, DRC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. 7999519 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yadav, D, Tobah, Y, Sugawara, K, Mitsushio, J, Tamamushi, G, Watanabe, T, Dubinov, AA, Ryzhii, M, Ryzhii, V & Otsuji, T 2017, Terahertz LED based on current injection dual-gate graphene-channel field effect transistors. in 75th Annual Device Research Conference, DRC 2017., 7999519, Device Research Conference - Conference Digest, DRC, Institute of Electrical and Electronics Engineers Inc., 75th Annual Device Research Conference, DRC 2017, South Bend, United States, 17/6/25. https://doi.org/10.1109/DRC.2017.7999519

Yadav D, Tobah Y, Sugawara K, Mitsushio J, Tamamushi G, Watanabe T et al. Terahertz LED based on current injection dual-gate graphene-channel field effect transistors. In 75th Annual Device Research Conference, DRC 2017. Institute of Electrical and Electronics Engineers Inc. 2017. 7999519. (Device Research Conference - Conference Digest, DRC). doi: 10.1109/DRC.2017.7999519

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abstract = "Previous studies have shown that optical and/or injection pumping of graphene can enable negative-dynamic conductivity in the terahertz (THz) spectral range, which may lead to new types of THz lasers and light-emitting devices [1-4]. Recently we obtained preliminary results of single-mode THz lasing in a forward-biased graphene structure with a lateral p-i-n junction in a distributed-feedback dual-gate graphene-channel field-effect transistor (DFB-DG-GFET) [5]. In this work, we experimentally observe amplified spontaneous broadband THz emission from 1 to 7.6 THz at 100K by carrier-injection in a population-inverted DFB-DG-GFET, demonstrating the birth of a new type of THz light-emitting diodes.",

author = "Deepika Yadav and Youssef Tobah and Kenta Sugawara and Junki Mitsushio and Gen Tamamushi and Takayuki Watanabe and Dubinov, {Alexander A.} and Maxim Ryzhii and Victor Ryzhii and Taiichi Otsuji",

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AU - Yadav, Deepika

AU - Tobah, Youssef

AU - Sugawara, Kenta

AU - Mitsushio, Junki

AU - Tamamushi, Gen

AU - Watanabe, Takayuki

AU - Dubinov, Alexander A.

AU - Ryzhii, Maxim

AU - Ryzhii, Victor

AU - Otsuji, Taiichi

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N2 - Previous studies have shown that optical and/or injection pumping of graphene can enable negative-dynamic conductivity in the terahertz (THz) spectral range, which may lead to new types of THz lasers and light-emitting devices [1-4]. Recently we obtained preliminary results of single-mode THz lasing in a forward-biased graphene structure with a lateral p-i-n junction in a distributed-feedback dual-gate graphene-channel field-effect transistor (DFB-DG-GFET) [5]. In this work, we experimentally observe amplified spontaneous broadband THz emission from 1 to 7.6 THz at 100K by carrier-injection in a population-inverted DFB-DG-GFET, demonstrating the birth of a new type of THz light-emitting diodes.

AB - Previous studies have shown that optical and/or injection pumping of graphene can enable negative-dynamic conductivity in the terahertz (THz) spectral range, which may lead to new types of THz lasers and light-emitting devices [1-4]. Recently we obtained preliminary results of single-mode THz lasing in a forward-biased graphene structure with a lateral p-i-n junction in a distributed-feedback dual-gate graphene-channel field-effect transistor (DFB-DG-GFET) [5]. In this work, we experimentally observe amplified spontaneous broadband THz emission from 1 to 7.6 THz at 100K by carrier-injection in a population-inverted DFB-DG-GFET, demonstrating the birth of a new type of THz light-emitting diodes.

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Terahertz LED based on current injection dual-gate graphene-channel field effect transistors

Abstract

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