Terahertz light-emitting graphene-channel transistor toward single-mode lasing

Deepika Yadav, Gen Tamamushi, Takayuki Watanabe, Junki Mitsushio, Youssef Tobah, Kenta Sugawara, Alexander A. Dubinov, Akira Satou, Maxim Ryzhii, Victor Ryzhii, Taiichi Otsuji

Research output: Contribution to journalArticlepeer-review

52 Citations (Scopus)


A distributed feedback dual-gate graphene-channel field-effect transistor (DFB-DG-GFET) was fabricated as a current-injection terahertz (THz) light-emitting laser transistor. We observed a broadband emission in a 1-7.6-THz range with a maximum radiation power of ~10 μW as well as a single-mode emission at 5.2 THz with a radiation power of ~0.1 μW both at 100 K when the carrier injection stays between the lower cutoff and upper cutoff threshold levels. The device also exhibited peculiar nonlinear threshold-like behavior with respect to the current-injection level. The LED-like broadband emission is interpreted as an amplified spontaneous THz emission being transcended to a single-mode lasing. Design constraints on waveguide structures for better THz photon field confinement with higher gain overlapping as well as DFB cavity structures with higher Q factors are also addressed towards intense, single-mode continuous wave THz lasing at room temperature.

Original languageEnglish
Pages (from-to)741-752
Number of pages12
Issue number4
Publication statusPublished - 2018 Mar 28


  • current injection
  • distributed-feedback
  • far infrared or terahertz
  • Graphene
  • lasers
  • optoelectronics
  • pumping


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