@article{c3e1394e612e4629ab1ea9e718f9078c,
title = "Terahertz light-emitting graphene-channel transistor toward single-mode lasing",
abstract = "A distributed feedback dual-gate graphene-channel field-effect transistor (DFB-DG-GFET) was fabricated as a current-injection terahertz (THz) light-emitting laser transistor. We observed a broadband emission in a 1-7.6-THz range with a maximum radiation power of ~10 μW as well as a single-mode emission at 5.2 THz with a radiation power of ~0.1 μW both at 100 K when the carrier injection stays between the lower cutoff and upper cutoff threshold levels. The device also exhibited peculiar nonlinear threshold-like behavior with respect to the current-injection level. The LED-like broadband emission is interpreted as an amplified spontaneous THz emission being transcended to a single-mode lasing. Design constraints on waveguide structures for better THz photon field confinement with higher gain overlapping as well as DFB cavity structures with higher Q factors are also addressed towards intense, single-mode continuous wave THz lasing at room temperature.",
keywords = "current injection, distributed-feedback, far infrared or terahertz, Graphene, lasers, optoelectronics, pumping",
author = "Deepika Yadav and Gen Tamamushi and Takayuki Watanabe and Junki Mitsushio and Youssef Tobah and Kenta Sugawara and Dubinov, {Alexander A.} and Akira Satou and Maxim Ryzhii and Victor Ryzhii and Taiichi Otsuji",
note = "Funding Information: Acknowledgments: The authors acknowledge Tetsuya Suemitsu, Hirokazu Fukidome, and Maki Suemitsu for their contributions on device processes and graphene synthesis and characterization. The epitaxial graphene was synthesized by Prof. H. Fukidome, K. Tashima, and Prof. M. Suemitsu, for which detailed characterizations of the structural and electronic properties of the epitaxial graphene were performed as the contracted cooperation studies between Prof. H. Fukidome, Prof. M. Suemitsu, Photon Factory (2015S2-005, and 2015G536), and SPring-8 (2015A1278 and 2015B1232) with devoted contributions from and insightful discussions with staffs at Photon Factory and SPring-8 (Prof. H. Kumigashira, Prof. K. Hor-iba, and Prof. M. Kotsugi). They also thank Vladimir Ya Aleshkin, Stephane Boubanga-Tombet, Vladimir Mitin, and Michael S. Shur for valuable discussions. The device process was carried out at the Laboratory for Nanoelec-tronics and Spintronics at RIEC in Tohoku University. The part of the works primarily contributed by D.Y., A.S., T.W., M.R., V.R., and T.O. was financially supported by JSPS KAKENHI (#23000008, #16H06361, and #16K14243), Japan. The part of the works primarily contributed by V.R. was supported by the Russian Scientific Foundation (#14-29-00277), and the part of the works by A.A.D. was supported by the Russian Foundation of the Basic Research (#18-52-50024). Publisher Copyright: {\textcopyright} 2018 Taiichi Otsuji et al.",
year = "2018",
month = mar,
day = "28",
doi = "10.1515/nanoph-2017-0106",
language = "English",
volume = "7",
pages = "741--752",
journal = "Nanophotonics",
issn = "2192-8606",
publisher = "Walter de Gruyter",
number = "4",
}