Terahertz light emitting transistor based on current injection dualgate graphene-channel FET

Deepika Yadav; Youssef Tobah; Kenta Sugawara; Junki Mitsushio; Gen Tamamushi; Takayuki Watanabe; Alexander A. Dubinov; Maxim Ryzhii; Victor Ryzhii; Taiichi Otsuji

doi:10.1109/IRMMW-THz.2017.8067215

Terahertz light emitting transistor based on current injection dualgate graphene-channel FET

Deepika Yadav, Youssef Tobah, Kenta Sugawara, Junki Mitsushio, Gen Tamamushi, Takayuki Watanabe, Alexander A. Dubinov, Maxim Ryzhii, Victor Ryzhii, Taiichi Otsuji

RIEC - Information Communication Platforms Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We report on amplified spontaneous broadband terahertz emission in 1-7.6 THz range at 100 K via current injection in a distributed-feedback dual-gate graphene-channel field effect transistor (DFB-DG GFET). The device exhibited a nonlinear threshold-like behavior with respect to the current-injection level. A precise DFB cavity design is expected to transcend the observed spontaneous broadband emission to single-mode THz lasing.

Original language	English
Title of host publication	2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017
Publisher	IEEE Computer Society
ISBN (Electronic)	9781509060481
DOIs	https://doi.org/10.1109/IRMMW-THz.2017.8067215
Publication status	Published - 2017 Oct 12
Event	42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017 - Cancun, Quintana Roo, Mexico Duration: 2017 Aug 27 → 2017 Sept 1

Publication series

Name	International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
ISSN (Print)	2162-2027
ISSN (Electronic)	2162-2035

Conference

Conference	42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017
Country/Territory	Mexico
City	Cancun, Quintana Roo
Period	17/8/27 → 17/9/1

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10.1109/IRMMW-THz.2017.8067215

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Yadav, D., Tobah, Y., Sugawara, K., Mitsushio, J., Tamamushi, G., Watanabe, T., Dubinov, A. A., Ryzhii, M., Ryzhii, V., & Otsuji, T. (2017). Terahertz light emitting transistor based on current injection dualgate graphene-channel FET. In 2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017 Article 8067215 (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz). IEEE Computer Society. https://doi.org/10.1109/IRMMW-THz.2017.8067215

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title = "Terahertz light emitting transistor based on current injection dualgate graphene-channel FET",

abstract = "We report on amplified spontaneous broadband terahertz emission in 1-7.6 THz range at 100 K via current injection in a distributed-feedback dual-gate graphene-channel field effect transistor (DFB-DG GFET). The device exhibited a nonlinear threshold-like behavior with respect to the current-injection level. A precise DFB cavity design is expected to transcend the observed spontaneous broadband emission to single-mode THz lasing.",

author = "Deepika Yadav and Youssef Tobah and Kenta Sugawara and Junki Mitsushio and Gen Tamamushi and Takayuki Watanabe and Dubinov, {Alexander A.} and Maxim Ryzhii and Victor Ryzhii and Taiichi Otsuji",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017 ; Conference date: 27-08-2017 Through 01-09-2017",

year = "2017",

month = oct,

day = "12",

doi = "10.1109/IRMMW-THz.2017.8067215",

language = "English",

series = "International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz",

publisher = "IEEE Computer Society",

booktitle = "2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017",

address = "United States",

}

Yadav, D, Tobah, Y, Sugawara, K, Mitsushio, J, Tamamushi, G, Watanabe, T, Dubinov, AA, Ryzhii, M, Ryzhii, V & Otsuji, T 2017, Terahertz light emitting transistor based on current injection dualgate graphene-channel FET. in 2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017., 8067215, International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, IEEE Computer Society, 42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017, Cancun, Quintana Roo, Mexico, 17/8/27. https://doi.org/10.1109/IRMMW-THz.2017.8067215

Terahertz light emitting transistor based on current injection dualgate graphene-channel FET. / Yadav, Deepika; Tobah, Youssef; Sugawara, Kenta et al.
2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017. IEEE Computer Society, 2017. 8067215 (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Terahertz light emitting transistor based on current injection dualgate graphene-channel FET

AU - Yadav, Deepika

AU - Tobah, Youssef

AU - Sugawara, Kenta

AU - Mitsushio, Junki

AU - Tamamushi, Gen

AU - Watanabe, Takayuki

AU - Dubinov, Alexander A.

AU - Ryzhii, Maxim

AU - Ryzhii, Victor

AU - Otsuji, Taiichi

PY - 2017/10/12

Y1 - 2017/10/12

N2 - We report on amplified spontaneous broadband terahertz emission in 1-7.6 THz range at 100 K via current injection in a distributed-feedback dual-gate graphene-channel field effect transistor (DFB-DG GFET). The device exhibited a nonlinear threshold-like behavior with respect to the current-injection level. A precise DFB cavity design is expected to transcend the observed spontaneous broadband emission to single-mode THz lasing.

AB - We report on amplified spontaneous broadband terahertz emission in 1-7.6 THz range at 100 K via current injection in a distributed-feedback dual-gate graphene-channel field effect transistor (DFB-DG GFET). The device exhibited a nonlinear threshold-like behavior with respect to the current-injection level. A precise DFB cavity design is expected to transcend the observed spontaneous broadband emission to single-mode THz lasing.

UR - http://www.scopus.com/inward/record.url?scp=85033697462&partnerID=8YFLogxK

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U2 - 10.1109/IRMMW-THz.2017.8067215

DO - 10.1109/IRMMW-THz.2017.8067215

M3 - Conference contribution

AN - SCOPUS:85033697462

T3 - International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz

BT - 2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017

PB - IEEE Computer Society

T2 - 42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017

Y2 - 27 August 2017 through 1 September 2017

ER -

Yadav D, Tobah Y, Sugawara K, Mitsushio J, Tamamushi G, Watanabe T et al. Terahertz light emitting transistor based on current injection dualgate graphene-channel FET. In 2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017. IEEE Computer Society. 2017. 8067215. (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz). doi: 10.1109/IRMMW-THz.2017.8067215

Terahertz light emitting transistor based on current injection dualgate graphene-channel FET

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