The terahertz (THz) plasma resonant phenomena exhibited by semiconducting gallium arsenide based high electron mobility transistors (HEMT) is discussed. The terahertz excitation was performed by photomixing two sources in different frequency generations. The modulated DC drain-source components were measured using a lock-in amplifier. The measurements verified that the plasma resonance frequency is controlled by a wide terahertz range.
|Number of pages||2|
|Publication status||Published - 2001|
|Event||Device Research Conference (DRC) - Notre Dame, IN, United States|
Duration: 2001 Jun 25 → 2001 Jun 27
|Conference||Device Research Conference (DRC)|
|City||Notre Dame, IN|
|Period||01/6/25 → 01/6/27|