Terahertz plasma-wave excitation in 80-nm gate-length GaAs MESFET by photomixing long-wavelength CW laser sources

T. Otsuji; Y. Kanamaru; H. Kitamura; S. Nakae

Terahertz plasma-wave excitation in 80-nm gate-length GaAs MESFET by photomixing long-wavelength CW laser sources

T. Otsuji, Y. Kanamaru, H. Kitamura, S. Nakae

RIEC - Information Communication Platforms Division

Kyushu Institute of Technology

Research output: Contribution to conference › Paper › peer-review

6 Citations (Scopus)

Abstract

The terahertz (THz) plasma resonant phenomena exhibited by semiconducting gallium arsenide based high electron mobility transistors (HEMT) is discussed. The terahertz excitation was performed by photomixing two sources in different frequency generations. The modulated DC drain-source components were measured using a lock-in amplifier. The measurements verified that the plasma resonance frequency is controlled by a wide terahertz range.

Original language	English
Pages	97-98
Number of pages	2
Publication status	Published - 2001
Event	Device Research Conference (DRC) - Notre Dame, IN, United States Duration: 2001 Jun 25 → 2001 Jun 27

Conference

Conference	Device Research Conference (DRC)
Country/Territory	United States
City	Notre Dame, IN
Period	01/6/25 → 01/6/27

Cite this

@conference{1b110c1411de42b9ba54587b5c4d568a,

title = "Terahertz plasma-wave excitation in 80-nm gate-length GaAs MESFET by photomixing long-wavelength CW laser sources",

abstract = "The terahertz (THz) plasma resonant phenomena exhibited by semiconducting gallium arsenide based high electron mobility transistors (HEMT) is discussed. The terahertz excitation was performed by photomixing two sources in different frequency generations. The modulated DC drain-source components were measured using a lock-in amplifier. The measurements verified that the plasma resonance frequency is controlled by a wide terahertz range.",

author = "T. Otsuji and Y. Kanamaru and H. Kitamura and S. Nakae",

year = "2001",

language = "English",

pages = "97--98",

note = "Device Research Conference (DRC) ; Conference date: 25-06-2001 Through 27-06-2001",

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TY - CONF

T1 - Terahertz plasma-wave excitation in 80-nm gate-length GaAs MESFET by photomixing long-wavelength CW laser sources

AU - Otsuji, T.

AU - Kanamaru, Y.

AU - Kitamura, H.

AU - Nakae, S.

PY - 2001

Y1 - 2001

N2 - The terahertz (THz) plasma resonant phenomena exhibited by semiconducting gallium arsenide based high electron mobility transistors (HEMT) is discussed. The terahertz excitation was performed by photomixing two sources in different frequency generations. The modulated DC drain-source components were measured using a lock-in amplifier. The measurements verified that the plasma resonance frequency is controlled by a wide terahertz range.

AB - The terahertz (THz) plasma resonant phenomena exhibited by semiconducting gallium arsenide based high electron mobility transistors (HEMT) is discussed. The terahertz excitation was performed by photomixing two sources in different frequency generations. The modulated DC drain-source components were measured using a lock-in amplifier. The measurements verified that the plasma resonance frequency is controlled by a wide terahertz range.

UR - http://www.scopus.com/inward/record.url?scp=0034875248&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034875248&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0034875248

SP - 97

EP - 98

T2 - Device Research Conference (DRC)

Y2 - 25 June 2001 through 27 June 2001

ER -

Terahertz plasma-wave excitation in 80-nm gate-length GaAs MESFET by photomixing long-wavelength CW laser sources

Abstract

Conference

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