Terahertz plasmon-emitting graphene-channel transistor

A. A. Dubinov; V. Ya Aleshkin; S. V. Morozov; V. Ryzhii; T. Otsuji

doi:10.1016/j.opelre.2019.11.003

Terahertz plasmon-emitting graphene-channel transistor

A. A. Dubinov, V. Ya Aleshkin, S. V. Morozov, V. Ryzhii, T. Otsuji

Broadband Engineering Division

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

In this work we propose and analyze the possibility of creating terahertz plasmon-emitting graphene-channel transistor. It is shown that at electric pumping the damping of the terahertz plasmons can give way to their amplification, when the real part of the dynamic conductivity of graphene becomes negative in the terahertz range of frequencies due to the interband population inversion.

Original language	English
Pages (from-to)	345-347
Number of pages	3
Journal	Opto-electronics Review
Volume	27
Issue number	4
DOIs	https://doi.org/10.1016/j.opelre.2019.11.003
Publication status	Published - 2019 Dec

Keywords

Graphene
Plasmon
Terahertz
Transistor

ASJC Scopus subject areas

Radiation
Materials Science(all)
Electrical and Electronic Engineering

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10.1016/j.opelre.2019.11.003

Cite this

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title = "Terahertz plasmon-emitting graphene-channel transistor",

abstract = "In this work we propose and analyze the possibility of creating terahertz plasmon-emitting graphene-channel transistor. It is shown that at electric pumping the damping of the terahertz plasmons can give way to their amplification, when the real part of the dynamic conductivity of graphene becomes negative in the terahertz range of frequencies due to the interband population inversion.",

keywords = "Graphene, Plasmon, Terahertz, Transistor",

author = "Dubinov, {A. A.} and Aleshkin, {V. Ya} and Morozov, {S. V.} and V. Ryzhii and T. Otsuji",

note = "Funding Information: This work was supported by the Russian Foundation of the Basic Research (#18-52-50024) and the Development Foundation for Theoretical Physics and Mathematics {"}BASIS{"} ( #19-1-2-12-1 ). Publisher Copyright: {\textcopyright} 2019 Association of Polish Electrical Engineers (SEP).",

year = "2019",

month = dec,

doi = "10.1016/j.opelre.2019.11.003",

language = "English",

volume = "27",

pages = "345--347",

journal = "Opto-electronics Review",

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TY - JOUR

T1 - Terahertz plasmon-emitting graphene-channel transistor

AU - Dubinov, A. A.

AU - Aleshkin, V. Ya

AU - Morozov, S. V.

AU - Ryzhii, V.

AU - Otsuji, T.

N1 - Funding Information: This work was supported by the Russian Foundation of the Basic Research (#18-52-50024) and the Development Foundation for Theoretical Physics and Mathematics "BASIS" ( #19-1-2-12-1 ). Publisher Copyright: © 2019 Association of Polish Electrical Engineers (SEP).

PY - 2019/12

Y1 - 2019/12

N2 - In this work we propose and analyze the possibility of creating terahertz plasmon-emitting graphene-channel transistor. It is shown that at electric pumping the damping of the terahertz plasmons can give way to their amplification, when the real part of the dynamic conductivity of graphene becomes negative in the terahertz range of frequencies due to the interband population inversion.

AB - In this work we propose and analyze the possibility of creating terahertz plasmon-emitting graphene-channel transistor. It is shown that at electric pumping the damping of the terahertz plasmons can give way to their amplification, when the real part of the dynamic conductivity of graphene becomes negative in the terahertz range of frequencies due to the interband population inversion.

KW - Graphene

KW - Plasmon

KW - Terahertz

KW - Transistor

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DO - 10.1016/j.opelre.2019.11.003

M3 - Article

AN - SCOPUS:85076209166

SN - 1230-3402

VL - 27

SP - 345

EP - 347

JO - Opto-electronics Review

JF - Opto-electronics Review

IS - 4

ER -

Terahertz plasmon-emitting graphene-channel transistor

Abstract

Keywords

ASJC Scopus subject areas

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