Terahertz plasmon-emitting graphene-channel transistor

A. A. Dubinov, V. Ya Aleshkin, S. V. Morozov, V. Ryzhii, T. Otsuji

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


In this work we propose and analyze the possibility of creating terahertz plasmon-emitting graphene-channel transistor. It is shown that at electric pumping the damping of the terahertz plasmons can give way to their amplification, when the real part of the dynamic conductivity of graphene becomes negative in the terahertz range of frequencies due to the interband population inversion.

Original languageEnglish
Pages (from-to)345-347
Number of pages3
JournalOpto-electronics Review
Issue number4
Publication statusPublished - 2019 Dec


  • Graphene
  • Plasmon
  • Terahertz
  • Transistor

ASJC Scopus subject areas

  • Radiation
  • Materials Science(all)
  • Electrical and Electronic Engineering


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