Terahertz wave generation via difference frequency generation using 2D InxGa1−xSe crystal grown from indium flux

Yohei Sato; Chao Tang; Katsuya Watanabe; Junya Ohsaki; Takuya Yamamoto; Nobuki Tezuka; Tadao Tanabe; Yutaka Oyama

doi:10.1364/OE.28.000472

Terahertz wave generation via difference frequency generation using 2D In_xGa_1−xSe crystal grown from indium flux

Yohei Sato, Chao Tang, Katsuya Watanabe, Junya Ohsaki, Takuya Yamamoto, Nobuki Tezuka, Tadao Tanabe, Yutaka Oyama

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We demonstrate the generation of THz waves (frequency 9.7 THz) using difference frequency generation in an In_xGa_1−xSe mixed crystal grown from In flux. The amount of indium and the lattice constant of the crystal were evaluated using electron micro probe analysis and X-ray diffraction, respectively. We believe that the Ga sites were substituted by In atoms in the In_xGa_1−xSe crystal because the In content, estimated according to the Vegard’s law, was similar to that measured by EPMA. The maximum power of the generated THz wave was 39 pJ and the conversion efficiency was 1.7×10⁻⁵ J⁻¹. This conversion efficiency was 28 times larger than that reported for undoped GaSe crystal.

Original language	English
Pages (from-to)	472-477
Number of pages	6
Journal	Optics Express
Volume	28
Issue number	1
DOIs	https://doi.org/10.1364/OE.28.000472
Publication status	Published - 2020

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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title = "Terahertz wave generation via difference frequency generation using 2D InxGa1−xSe crystal grown from indium flux",

abstract = "We demonstrate the generation of THz waves (frequency 9.7 THz) using difference frequency generation in an InxGa1−xSe mixed crystal grown from In flux. The amount of indium and the lattice constant of the crystal were evaluated using electron micro probe analysis and X-ray diffraction, respectively. We believe that the Ga sites were substituted by In atoms in the InxGa1−xSe crystal because the In content, estimated according to the Vegard{\textquoteright}s law, was similar to that measured by EPMA. The maximum power of the generated THz wave was 39 pJ and the conversion efficiency was 1.7×10−5 J−1. This conversion efficiency was 28 times larger than that reported for undoped GaSe crystal.",

author = "Yohei Sato and Chao Tang and Katsuya Watanabe and Junya Ohsaki and Takuya Yamamoto and Nobuki Tezuka and Tadao Tanabe and Yutaka Oyama",

note = "Funding Information: Japan Society for the Promotion of Science (JP18J11396, JP19J20564). Publisher Copyright: {\textcopyright} 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement.",

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doi = "10.1364/OE.28.000472",

language = "English",

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T1 - Terahertz wave generation via difference frequency generation using 2D InxGa1−xSe crystal grown from indium flux

AU - Sato, Yohei

AU - Tang, Chao

AU - Watanabe, Katsuya

AU - Ohsaki, Junya

AU - Yamamoto, Takuya

AU - Tezuka, Nobuki

AU - Tanabe, Tadao

AU - Oyama, Yutaka

N1 - Funding Information: Japan Society for the Promotion of Science (JP18J11396, JP19J20564). Publisher Copyright: © 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement.

PY - 2020

Y1 - 2020

N2 - We demonstrate the generation of THz waves (frequency 9.7 THz) using difference frequency generation in an InxGa1−xSe mixed crystal grown from In flux. The amount of indium and the lattice constant of the crystal were evaluated using electron micro probe analysis and X-ray diffraction, respectively. We believe that the Ga sites were substituted by In atoms in the InxGa1−xSe crystal because the In content, estimated according to the Vegard’s law, was similar to that measured by EPMA. The maximum power of the generated THz wave was 39 pJ and the conversion efficiency was 1.7×10−5 J−1. This conversion efficiency was 28 times larger than that reported for undoped GaSe crystal.

AB - We demonstrate the generation of THz waves (frequency 9.7 THz) using difference frequency generation in an InxGa1−xSe mixed crystal grown from In flux. The amount of indium and the lattice constant of the crystal were evaluated using electron micro probe analysis and X-ray diffraction, respectively. We believe that the Ga sites were substituted by In atoms in the InxGa1−xSe crystal because the In content, estimated according to the Vegard’s law, was similar to that measured by EPMA. The maximum power of the generated THz wave was 39 pJ and the conversion efficiency was 1.7×10−5 J−1. This conversion efficiency was 28 times larger than that reported for undoped GaSe crystal.

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ER -

Terahertz wave generation via difference frequency generation using 2D In_xGa_1−xSe crystal grown from indium flux

Abstract

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