A study was performed on the termination mechanism of inversion domains by stacking faults in GaN films. The film was grown on a sapphire substrate by molecular beam epitaxy with intermittent indium exposure during film growth. It was found that although many inversion domains (ID) were generated at the film/substrate interface, stacking faults on the basal plane of GaN, which was formed at the position of indium exposure, were found to play an important role in terminating the growth of ID's.
|Number of pages||6|
|Journal||Journal of Applied Physics|
|Publication status||Published - 2003 Mar 15|
ASJC Scopus subject areas
- Physics and Astronomy(all)