Termination mechanism of inversion domains by stacking faults in GaN

C. Iwamoto; X. Q. Shen; H. Okumura; H. Matsuhata; Y. Ikuhara

doi:10.1063/1.1544427

Termination mechanism of inversion domains by stacking faults in GaN

C. Iwamoto, X. Q. Shen, H. Okumura, H. Matsuhata, Y. Ikuhara

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13 Citations (Scopus)

Abstract

A study was performed on the termination mechanism of inversion domains by stacking faults in GaN films. The film was grown on a sapphire substrate by molecular beam epitaxy with intermittent indium exposure during film growth. It was found that although many inversion domains (ID) were generated at the film/substrate interface, stacking faults on the basal plane of GaN, which was formed at the position of indium exposure, were found to play an important role in terminating the growth of ID's.

Original language	English
Pages (from-to)	3264-3269
Number of pages	6
Journal	Journal of Applied Physics
Volume	93
Issue number	6
DOIs	https://doi.org/10.1063/1.1544427
Publication status	Published - 2003 Mar 15

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.1544427

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AU - Shen, X. Q.

AU - Okumura, H.

AU - Matsuhata, H.

AU - Ikuhara, Y.

PY - 2003/3/15

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Termination mechanism of inversion domains by stacking faults in GaN

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