TY - GEN
T1 - Ternary and quaternary wurtzite-type oxide semiconductors
T2 - Oxide-Based Materials and Devices VI
AU - Omata, T.
N1 - Publisher Copyright:
© 2015 SPIE.
PY - 2015
Y1 - 2015
N2 - β-NaFeO2 structure is an orthorhombic wurtzite-derived structure, of which the structural relationship with wurtzite structure is similar to that of the chalcopyrite sturcture with zincblende structure. β-LiGaO2, β-AgGaO2 and β-AgAlO2 are known as materials possessing the β-NaFeO2 structure; however, studies on the wurtzite-derived ternary oxide semiconductors are quite limited. Recently, we demonstrated the band gap engineering of zinc oxide by alloying with wurtzite-type β-AgGaO2, and the band gap of ZnO was reduced to 2.55 eV by this alloying. Very recently, a new wurtzite-type ternary compound, β-CuGaO2, was found out. Its energy band gap was 1.47 eV, and it exhibited p-type conduction. The first principle calculation indicated that β-CuGaO2 is a direct semiconductor; therefore it is suitable to use in optoelectronic devices. Taking the 1.47 eV of the band gap and p-type electronic conduction into account, β- CuGaO2 is a promising material for the thin film solar cell absorber. These new ternary oxide semiconductors possessing wurtzite-derived structure expanded the energy region that the oxide semiconductors cover into visible and near-infrared region.
AB - β-NaFeO2 structure is an orthorhombic wurtzite-derived structure, of which the structural relationship with wurtzite structure is similar to that of the chalcopyrite sturcture with zincblende structure. β-LiGaO2, β-AgGaO2 and β-AgAlO2 are known as materials possessing the β-NaFeO2 structure; however, studies on the wurtzite-derived ternary oxide semiconductors are quite limited. Recently, we demonstrated the band gap engineering of zinc oxide by alloying with wurtzite-type β-AgGaO2, and the band gap of ZnO was reduced to 2.55 eV by this alloying. Very recently, a new wurtzite-type ternary compound, β-CuGaO2, was found out. Its energy band gap was 1.47 eV, and it exhibited p-type conduction. The first principle calculation indicated that β-CuGaO2 is a direct semiconductor; therefore it is suitable to use in optoelectronic devices. Taking the 1.47 eV of the band gap and p-type electronic conduction into account, β- CuGaO2 is a promising material for the thin film solar cell absorber. These new ternary oxide semiconductors possessing wurtzite-derived structure expanded the energy region that the oxide semiconductors cover into visible and near-infrared region.
KW - band gap engineering
KW - I-III-VI<inf>2</inf> semiconductors
KW - narrow band gap semiconductors
KW - Oxide semiconductor
KW - wide band gap semiconductors
KW - Wurtzite structure
KW - zinc oxide
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U2 - 10.1117/12.2175570
DO - 10.1117/12.2175570
M3 - Conference contribution
AN - SCOPUS:84931846571
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Oxide-Based Materials and Devices VI
A2 - Teherani, Ferechteh H.
A2 - Look, David C.
A2 - Rogers, David J.
PB - SPIE
Y2 - 8 February 2015 through 11 February 2015
ER -