TY - JOUR
T1 - TETRAGONAL HEUSLER-LIKE Mn-Ga ALLOYS BASED PERPENDICULAR MAGNETIC TUNNEL JUNCTIONS
AU - Ma, Qinli
AU - Sugihara, Atsushi
AU - Suzuki, Kazuya
AU - Zhang, Xianmin
AU - Miyazaki, Terunobu
AU - Mizukami, Shigemi
N1 - Funding Information:
This work was supported in part through Grant-in-Aid for Scientific Research from the JSPS, Grant for Industrial Technology Research from NEDO, the Strategic International Cooperative Program ASPIMATT from JST, NEDO Spintronics Nonvolatile Devices Projects, the Asahi glass foundation, and the Casio Foundation.
Funding Information:
This work was supported in part through Grant-in-Aid for Scienti¯c Research from the JSPS, Grant for Industrial Technology Research from NEDO, the Strategic International Cooperative Program ASPIMATT from JST, NEDO Spintronics Nonvolatile Devices Projects, the Asahi glass foundation, and the Casio Foundation.
Publisher Copyright:
© 2014 World Scientific Publishing Company.
PY - 2014/12/1
Y1 - 2014/12/1
N2 - Films of the Mn-based tetragonal Heusler-like alloys, such as Mn-Ga, exhibit a large perpendicular magnetic anisotropy (PMA), small damping constant, small saturation magnetization and large spin polarizations. These properties are attractive for the application to the next generation high density spin-transfer-torque (STT) magnetic random access memory (STT-MRAM). We reviewed the structure, magnetic properties and Gilbert damping of the alloy films with large PMA, and the current status of research on tunnel magnetoresistance (TMR) in perpendicular magnetic tunnel junctions (p-MTJs) based on Mn-based tetragonal Heusler-like alloy electrode, and also discuss the issues for the application of those to STT-MRAM.
AB - Films of the Mn-based tetragonal Heusler-like alloys, such as Mn-Ga, exhibit a large perpendicular magnetic anisotropy (PMA), small damping constant, small saturation magnetization and large spin polarizations. These properties are attractive for the application to the next generation high density spin-transfer-torque (STT) magnetic random access memory (STT-MRAM). We reviewed the structure, magnetic properties and Gilbert damping of the alloy films with large PMA, and the current status of research on tunnel magnetoresistance (TMR) in perpendicular magnetic tunnel junctions (p-MTJs) based on Mn-based tetragonal Heusler-like alloy electrode, and also discuss the issues for the application of those to STT-MRAM.
KW - films
KW - Gilbert damping
KW - magnetic tunnel junctions
KW - perpendicular magnetic anisotropy
KW - STT-MRAM
KW - Tetragonal Heusler-like alloys
KW - tunnel magnetoresistance
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U2 - 10.1142/S2010324714400244
DO - 10.1142/S2010324714400244
M3 - Article
AN - SCOPUS:85042391805
SN - 2010-3247
VL - 4
JO - SPIN
JF - SPIN
IS - 4
M1 - 1440024
ER -