The behavior of pinned layers using a high-field transfer curve

Sangmun Oh; K. Nishioka; H. Umezaki; H. Tanaka; T. Seki; S. Sasaki; T. Ohtsu; K. Kataoka; K. Furusawa

doi:10.1109/TMAG.2005.855323

The behavior of pinned layers using a high-field transfer curve

Sangmun Oh, K. Nishioka, H. Umezaki, H. Tanaka, T. Seki, S. Sasaki, T. Ohtsu, K. Kataoka, K. Furusawa

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

In order to study the magnetic behaviors of pinned layers under different conditions, we applied compressive mechanical stress to a device and measured the transfer curve changes using a high-field (10 kOe) quasi-static tester. This permitted us to determine the behaviors of the pinned layers and the free layer. The results of the transfer curve measurements led to a classification of these curves. The governing conditions for each category were also determined. A normal transfer curve occurs when "E_j > E_u ≫ E_k(AP1) and E_k(AP2)," where: AP1 is the pinned layer adjacent to the antiferromagnetic (AFM) layer; AP2 is the pinned layer adjacent to the spacer; E_u is the coupling energy constant between the antiferromagnetic layer and the AP1; E_j is the anti-parallel coupling energy constant between AP1 and AP2 through the Ru; and E_k (API) and E_k(AP2) are the induced uniaxial anisotropic energy constants in AP1 and AP2 due to magnetostriction resulting from stress applied giant magnetoresistive (GMR) sensor.

Original language	English
Pages (from-to)	2950-2952
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	41
Issue number	10
DOIs	https://doi.org/10.1109/TMAG.2005.855323
Publication status	Published - 2005 Oct
Externally published	Yes

Keywords

Anisotropic energy
Antiferromagnet
Giant magnetoresistive (GMR)
High-field transfer curve
Pinned layers
Quasistatic tester

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TMAG.2005.855323

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title = "The behavior of pinned layers using a high-field transfer curve",

abstract = "In order to study the magnetic behaviors of pinned layers under different conditions, we applied compressive mechanical stress to a device and measured the transfer curve changes using a high-field (10 kOe) quasi-static tester. This permitted us to determine the behaviors of the pinned layers and the free layer. The results of the transfer curve measurements led to a classification of these curves. The governing conditions for each category were also determined. A normal transfer curve occurs when {"}Ej > Eu ≫ Ek(AP1) and Ek(AP2),{"} where: AP1 is the pinned layer adjacent to the antiferromagnetic (AFM) layer; AP2 is the pinned layer adjacent to the spacer; Eu is the coupling energy constant between the antiferromagnetic layer and the AP1; Ej is the anti-parallel coupling energy constant between AP1 and AP2 through the Ru; and Ek (API) and Ek(AP2) are the induced uniaxial anisotropic energy constants in AP1 and AP2 due to magnetostriction resulting from stress applied giant magnetoresistive (GMR) sensor.",

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author = "Sangmun Oh and K. Nishioka and H. Umezaki and H. Tanaka and T. Seki and S. Sasaki and T. Ohtsu and K. Kataoka and K. Furusawa",

year = "2005",

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AU - Oh, Sangmun

AU - Nishioka, K.

AU - Umezaki, H.

AU - Tanaka, H.

AU - Seki, T.

AU - Sasaki, S.

AU - Ohtsu, T.

AU - Kataoka, K.

AU - Furusawa, K.

PY - 2005/10

Y1 - 2005/10

N2 - In order to study the magnetic behaviors of pinned layers under different conditions, we applied compressive mechanical stress to a device and measured the transfer curve changes using a high-field (10 kOe) quasi-static tester. This permitted us to determine the behaviors of the pinned layers and the free layer. The results of the transfer curve measurements led to a classification of these curves. The governing conditions for each category were also determined. A normal transfer curve occurs when "Ej > Eu ≫ Ek(AP1) and Ek(AP2)," where: AP1 is the pinned layer adjacent to the antiferromagnetic (AFM) layer; AP2 is the pinned layer adjacent to the spacer; Eu is the coupling energy constant between the antiferromagnetic layer and the AP1; Ej is the anti-parallel coupling energy constant between AP1 and AP2 through the Ru; and Ek (API) and Ek(AP2) are the induced uniaxial anisotropic energy constants in AP1 and AP2 due to magnetostriction resulting from stress applied giant magnetoresistive (GMR) sensor.

AB - In order to study the magnetic behaviors of pinned layers under different conditions, we applied compressive mechanical stress to a device and measured the transfer curve changes using a high-field (10 kOe) quasi-static tester. This permitted us to determine the behaviors of the pinned layers and the free layer. The results of the transfer curve measurements led to a classification of these curves. The governing conditions for each category were also determined. A normal transfer curve occurs when "Ej > Eu ≫ Ek(AP1) and Ek(AP2)," where: AP1 is the pinned layer adjacent to the antiferromagnetic (AFM) layer; AP2 is the pinned layer adjacent to the spacer; Eu is the coupling energy constant between the antiferromagnetic layer and the AP1; Ej is the anti-parallel coupling energy constant between AP1 and AP2 through the Ru; and Ek (API) and Ek(AP2) are the induced uniaxial anisotropic energy constants in AP1 and AP2 due to magnetostriction resulting from stress applied giant magnetoresistive (GMR) sensor.

KW - Anisotropic energy

KW - Antiferromagnet

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KW - High-field transfer curve

KW - Pinned layers

KW - Quasistatic tester

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The behavior of pinned layers using a high-field transfer curve

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Keywords

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