TY - JOUR
T1 - The characterization of the (111) facet faces on the seed cone of [100] silicon single crystals grown by MCZ and CZ methods by X-ray CTR scattering
AU - Harada, J.
AU - Shimura, T.
AU - Takata, M.
AU - Yakushiji, K.
AU - Hoshi, K.
N1 - Funding Information:
Acknowledgements The authors wish to thank their colleagues. and Dr. Y. Kashihara for useful discussions. They also wish to thank Professor N. Sakabe of the Photon Factory, KEK, for his encouragement to use his X-ray camera. This work was supported by the Photon Factory, KEK, under the proposal No.
PY - 1990/9
Y1 - 1990/9
N2 - The (111) facet faces on the seed cone of the [100] silicon single crystals grown by MCZ and CZ methods were characterized on an atomic scale by using X-ray CTR scattering. The natural (111) facet face of the MCZ single crystal was found to have a roughness of about three layers. This roughness is only very slightly inferior in comparison with that of the mechano-chemically polished (111) surface of a silicon wafer which has a roughness of two layers and is the flattest surface we have ever investigated. However, the (111) facet face of the usual CZ single crystal was so poor that the flatness could not be estimated. The effect of magnetic field on the crystal growth is discussed on the basis of these facts.
AB - The (111) facet faces on the seed cone of the [100] silicon single crystals grown by MCZ and CZ methods were characterized on an atomic scale by using X-ray CTR scattering. The natural (111) facet face of the MCZ single crystal was found to have a roughness of about three layers. This roughness is only very slightly inferior in comparison with that of the mechano-chemically polished (111) surface of a silicon wafer which has a roughness of two layers and is the flattest surface we have ever investigated. However, the (111) facet face of the usual CZ single crystal was so poor that the flatness could not be estimated. The effect of magnetic field on the crystal growth is discussed on the basis of these facts.
UR - http://www.scopus.com/inward/record.url?scp=0025490770&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0025490770&partnerID=8YFLogxK
U2 - 10.1016/0022-0248(90)90101-P
DO - 10.1016/0022-0248(90)90101-P
M3 - Article
AN - SCOPUS:0025490770
SN - 0022-0248
VL - 104
SP - 773
EP - 779
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 4
ER -