@inproceedings{53393faa445c4e24bf7ae282ba171d69,
title = "The cleaning method which is able to keep the smoothness of SI (100)",
abstract = "Si (100) with atomic order flat surface realized by 1200°C annealing in argon ambient is used for the experiment. During wet cleaning process, wet chemical cleaning solution, process time and temperature essentially affect the roughness of silicon surface. Then, the affection of every step of the traditional cleaning (RCA) and the new cleaning technology - 5-step room temperature cleaning to the roughness of Si (100) wafer is evaluated. As a result, 5-step room temperature cleaning which does not employ alkali solution can keep the atomic order flat surface on Si (100).",
keywords = "Cleaning, Roughness, Si (100)",
author = "Xiang Li and Xun Gu and Akinobu Teramoto and Rihito Kuroda and Rui Hasebe and Tomoyuki Suwa and Ningmei Yu and Shigetoshi Sugawa and Takashi Ito and Tadahiro Ohmi",
year = "2008",
language = "English",
isbn = "9789881740816",
series = "Proceedings - Electrochemical Society",
pages = "469--474",
booktitle = "Semiconductor Technology, ISTC 2008 - Proceedings of the 7th International Conference on Semiconductor Technology",
note = "7th International Conference on Semiconductor Technology, ISTC 2008 ; Conference date: 15-03-2008 Through 17-03-2008",
}