The correlation of adhesion strength with barrier structure in Cu metallization

A. Sekiguchi, J. Koike, K. Ueoka, J. Ye, H. Okamura, N. Otsuka, S. Ogawa, K. Maruyama

Research output: Contribution to journalConference articlepeer-review


Adhesion strength in sputter-deposited Cu thin films on various types of barrier layers was investigated by scratch test. The barrier layers were Ta1-xNx with varied nitrogen concentration of 0, 0.2, 0.3, and 0.5. Microstructure observation by TEM indicated that each layer consists of mixed phases of β-Ta, bcc-TaN0.1, hexagonal-TaN, and fcc-TaN, depending on the nitrogen concentration. A sulfur- containing amorphous phase was also present discontinuously at the Cu/barrier interfaces in all samples. Scratch test showed that delamination occurred at the Cu/barrier interface and that the overall adhesion strength increased with increasing the nitrogen concentration. A good correlation was found between the measured adhesion strength and the composing phases in the barrier layer.

Original languageEnglish
Pages (from-to)477-482
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 2003
EventMaterials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 - San Francisco, CA, United States
Duration: 2003 Apr 212003 Apr 25


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