TY - GEN
T1 - The effect of asymmetric barriers of GaAs quantum nanodisks light emitting diode
AU - Akio, Higo
AU - Thomas, Cedric Emmanuel
AU - Kiba, Takayuki
AU - Takayama, Junichi
AU - Yamashita, Ichiro
AU - Murayama, Akihiro
AU - Samukawa, Seiji
PY - 2016/11/21
Y1 - 2016/11/21
N2 - Quantum dots optoelectronic devices such as laser diodes, light emitting diodes (LED), high-speed modulators, semiconductor optical amplifiers are much attention because of their low power consumption and temperature stability. We have developed a defect-less top-down dry process for 15-nm in-diameter and 8-nm in thickness GaAs quantum nanodisks (QNDs) LEDs by a bio-template, neutral beam etching and asymmetric AlGaAs/GaAs regrown by metalorganic vapor phase epitaxy (MOVPE). To operate at room temperature, different aluminum contents barrier matrix were used for deep band energy offset between GaAs QNDs and AlGaAs barriers. Their temperature dependence of optical properties measured by electroluminescence (E-L) characteristics. We confirmed that energies and the transient behavior of the E-L characteristics as various temperature are strongly affected by the band offset energies, therefore, QND LEDs with different aluminum contents barriers has successfully operated by top-down fusion dry process at room temperature.
AB - Quantum dots optoelectronic devices such as laser diodes, light emitting diodes (LED), high-speed modulators, semiconductor optical amplifiers are much attention because of their low power consumption and temperature stability. We have developed a defect-less top-down dry process for 15-nm in-diameter and 8-nm in thickness GaAs quantum nanodisks (QNDs) LEDs by a bio-template, neutral beam etching and asymmetric AlGaAs/GaAs regrown by metalorganic vapor phase epitaxy (MOVPE). To operate at room temperature, different aluminum contents barrier matrix were used for deep band energy offset between GaAs QNDs and AlGaAs barriers. Their temperature dependence of optical properties measured by electroluminescence (E-L) characteristics. We confirmed that energies and the transient behavior of the E-L characteristics as various temperature are strongly affected by the band offset energies, therefore, QND LEDs with different aluminum contents barriers has successfully operated by top-down fusion dry process at room temperature.
UR - http://www.scopus.com/inward/record.url?scp=85006927632&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85006927632&partnerID=8YFLogxK
U2 - 10.1109/NANO.2016.7751303
DO - 10.1109/NANO.2016.7751303
M3 - Conference contribution
AN - SCOPUS:85006927632
T3 - 16th International Conference on Nanotechnology - IEEE NANO 2016
SP - 45
EP - 46
BT - 16th International Conference on Nanotechnology - IEEE NANO 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
Y2 - 22 August 2016 through 25 August 2016
ER -