The effect of inserting thin Co2MnAl layer into the Co 2MnSi/MgO interface on tunnel magnetoresistance effect

E. Ozawa; S. Tsunegi; M. Oogane; H. Naganuma; Y. Ando

doi:10.1088/1742-6596/266/1/012104

The effect of inserting thin Co₂MnAl layer into the Co ₂MnSi/MgO interface on tunnel magnetoresistance effect

E. Ozawa, S. Tsunegi, M. Oogane, H. Naganuma, Y. Ando

ENG - Applied Physics

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We fabricated an epitaxially grown B2-ordered Co₂MnAl Heusler alloy film by optimizing fabrication conditions, such as composition of the films and annealing temperature. Tunnel magnetoresistance (TMR) effect was investigated in Co₂MnSi/Co₂MnAl(0-1.0 nm)/MgO/CoFe magnetic tunnel junctions (MTJs). TMR ratio was enhanced by inserting a thin Co₂MnAl layer at the Co₂MnSi/MgO interface. The MTJ with Co₂MnAl thickness of 0.5 nm exhibited the highest TMR ratio at 310 K and 10 K.

Original language	English
Article number	012104
Journal	Journal of Physics: Conference Series
Volume	266
Issue number	1
DOIs	https://doi.org/10.1088/1742-6596/266/1/012104
Publication status	Published - 2011

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1088/1742-6596/266/1/012104

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abstract = "We fabricated an epitaxially grown B2-ordered Co2MnAl Heusler alloy film by optimizing fabrication conditions, such as composition of the films and annealing temperature. Tunnel magnetoresistance (TMR) effect was investigated in Co2MnSi/Co2MnAl(0-1.0 nm)/MgO/CoFe magnetic tunnel junctions (MTJs). TMR ratio was enhanced by inserting a thin Co2MnAl layer at the Co2MnSi/MgO interface. The MTJ with Co2MnAl thickness of 0.5 nm exhibited the highest TMR ratio at 310 K and 10 K.",

author = "E. Ozawa and S. Tsunegi and M. Oogane and H. Naganuma and Y. Ando",

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T1 - The effect of inserting thin Co2MnAl layer into the Co 2MnSi/MgO interface on tunnel magnetoresistance effect

AU - Ozawa, E.

AU - Tsunegi, S.

AU - Oogane, M.

AU - Naganuma, H.

AU - Ando, Y.

PY - 2011

Y1 - 2011

N2 - We fabricated an epitaxially grown B2-ordered Co2MnAl Heusler alloy film by optimizing fabrication conditions, such as composition of the films and annealing temperature. Tunnel magnetoresistance (TMR) effect was investigated in Co2MnSi/Co2MnAl(0-1.0 nm)/MgO/CoFe magnetic tunnel junctions (MTJs). TMR ratio was enhanced by inserting a thin Co2MnAl layer at the Co2MnSi/MgO interface. The MTJ with Co2MnAl thickness of 0.5 nm exhibited the highest TMR ratio at 310 K and 10 K.

AB - We fabricated an epitaxially grown B2-ordered Co2MnAl Heusler alloy film by optimizing fabrication conditions, such as composition of the films and annealing temperature. Tunnel magnetoresistance (TMR) effect was investigated in Co2MnSi/Co2MnAl(0-1.0 nm)/MgO/CoFe magnetic tunnel junctions (MTJs). TMR ratio was enhanced by inserting a thin Co2MnAl layer at the Co2MnSi/MgO interface. The MTJ with Co2MnAl thickness of 0.5 nm exhibited the highest TMR ratio at 310 K and 10 K.

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JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

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ER -

The effect of inserting thin Co₂MnAl layer into the Co ₂MnSi/MgO interface on tunnel magnetoresistance effect

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