Abstract
The electrical and optical properties of BiSiO2 cermet films were studied. Using the temperature dependence of the resistivity of the cermet films and the dependence of the amount of oxidation of the fine bismuth particles on the volume percentage of bismuth, the three-dimensional percolation threshold composition was determined to be approximately 18 vol. % Bi.
Original language | English |
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Pages (from-to) | 71-75 |
Number of pages | 5 |
Journal | Thin Solid Films |
Volume | 57 |
Issue number | 1 |
DOIs | |
Publication status | Published - 1979 Feb 15 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry