The exchange-coupled field in NiO/Ni double layer on silica substrates

Nobutaka Ihara, Shingo Akao, Satoru Akimoto, Shin Narushima, Toshiaki Saito, Kiminari Shinagawa, Tachiro Tsushima

Research output: Contribution to journalArticlepeer-review


The effect of silica substrate on the exchange-coupled field Hex in NiO/Ni films was examined. Ni film was vacuum-evaporated on a silica substrate, and then it was oxidized thermally in oxygen to form a NiO/Ni double-layered film. In comparison with our previous results of NiO/Ni film on MgO, Hex for silica and MgO substrate showed almost the same behavior. When the substrate temperature was varied during the evaporation of Ni, it was found that the crystal orientation of Ni in the NiO/Ni double-layered film changes, and Hex is almost independent of the Ni crystal orientation.

Original languageEnglish
Pages (from-to)4782-4786
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number9 A
Publication statusPublished - 1998 Sept
Externally publishedYes


  • Exchange-coupled field
  • MgO substrate
  • NiO/Ni
  • Silica substrate
  • Thermal oxidation
  • Vacuum evaporation

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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