The exchange-coupled field in NiO/Ni double layer on silica substrates

Nobutaka Ihara; Shingo Akao; Satoru Akimoto; Shin Narushima; Toshiaki Saito; Kiminari Shinagawa; Tachiro Tsushima

doi:10.1143/jjap.37.4782

The exchange-coupled field in NiO/Ni double layer on silica substrates

Nobutaka Ihara, Shingo Akao, Satoru Akimoto, Shin Narushima, Toshiaki Saito, Kiminari Shinagawa, Tachiro Tsushima

Research output: Contribution to journal › Article › peer-review

Abstract

The effect of silica substrate on the exchange-coupled field H_ex in NiO/Ni films was examined. Ni film was vacuum-evaporated on a silica substrate, and then it was oxidized thermally in oxygen to form a NiO/Ni double-layered film. In comparison with our previous results of NiO/Ni film on MgO, H_ex for silica and MgO substrate showed almost the same behavior. When the substrate temperature was varied during the evaporation of Ni, it was found that the crystal orientation of Ni in the NiO/Ni double-layered film changes, and H_ex is almost independent of the Ni crystal orientation.

Original language	English
Pages (from-to)	4782-4786
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	37
Issue number	9 A
DOIs	https://doi.org/10.1143/jjap.37.4782
Publication status	Published - 1998 Sept
Externally published	Yes

Keywords

Exchange-coupled field
MgO substrate
NiO/Ni
Silica substrate
Thermal oxidation
Vacuum evaporation

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.37.4782

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title = "The exchange-coupled field in NiO/Ni double layer on silica substrates",

abstract = "The effect of silica substrate on the exchange-coupled field Hex in NiO/Ni films was examined. Ni film was vacuum-evaporated on a silica substrate, and then it was oxidized thermally in oxygen to form a NiO/Ni double-layered film. In comparison with our previous results of NiO/Ni film on MgO, Hex for silica and MgO substrate showed almost the same behavior. When the substrate temperature was varied during the evaporation of Ni, it was found that the crystal orientation of Ni in the NiO/Ni double-layered film changes, and Hex is almost independent of the Ni crystal orientation.",

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T1 - The exchange-coupled field in NiO/Ni double layer on silica substrates

AU - Ihara, Nobutaka

AU - Akao, Shingo

AU - Akimoto, Satoru

AU - Narushima, Shin

AU - Saito, Toshiaki

AU - Shinagawa, Kiminari

AU - Tsushima, Tachiro

PY - 1998/9

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N2 - The effect of silica substrate on the exchange-coupled field Hex in NiO/Ni films was examined. Ni film was vacuum-evaporated on a silica substrate, and then it was oxidized thermally in oxygen to form a NiO/Ni double-layered film. In comparison with our previous results of NiO/Ni film on MgO, Hex for silica and MgO substrate showed almost the same behavior. When the substrate temperature was varied during the evaporation of Ni, it was found that the crystal orientation of Ni in the NiO/Ni double-layered film changes, and Hex is almost independent of the Ni crystal orientation.

AB - The effect of silica substrate on the exchange-coupled field Hex in NiO/Ni films was examined. Ni film was vacuum-evaporated on a silica substrate, and then it was oxidized thermally in oxygen to form a NiO/Ni double-layered film. In comparison with our previous results of NiO/Ni film on MgO, Hex for silica and MgO substrate showed almost the same behavior. When the substrate temperature was varied during the evaporation of Ni, it was found that the crystal orientation of Ni in the NiO/Ni double-layered film changes, and Hex is almost independent of the Ni crystal orientation.

KW - Exchange-coupled field

KW - MgO substrate

KW - NiO/Ni

KW - Silica substrate

KW - Thermal oxidation

KW - Vacuum evaporation

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The exchange-coupled field in NiO/Ni double layer on silica substrates

Abstract

Keywords

ASJC Scopus subject areas

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