The fabrication of Ni quantum cross devices with a 17nm junction and their current-voltage characteristics

Hideo Kaiju; Kenji Kondo; Akito Ono; Nobuyoshi Kawaguchi; Jonghan Won; Akihiko Hirata; Manabu Ishimaru; Yoshihiko Hirotsu; Akira Ishibashi

doi:10.1088/0957-4484/21/1/015301

The fabrication of Ni quantum cross devices with a 17nm junction and their current-voltage characteristics

Hideo Kaiju, Kenji Kondo, Akito Ono, Nobuyoshi Kawaguchi, Jonghan Won, Akihiko Hirata, Manabu Ishimaru, Yoshihiko Hirotsu, Akira Ishibashi

Advanced Institute for Materials Research (AIMR)

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Quantum cross (QC) devices which consist of two Ni thin films deposited on polyethylene naphthalate substrates with their edges crossing have been fabricated and their current-voltage characteristics have been investigated. The cross-sectional area between the two Ni electrodes, which was obtained without the use of electron-beam or optical lithography, can be as small as 17nm × 17nm. We have successfully obtained ohmic current-voltage characteristics, which show good agreement with calculation results within the framework of the modified Anderson model. The calculated results also predict a high switching ratio in excess of 100 000:1 for QC devices having the molecule sandwiched between the Ni electrodes. This indicates that QC devices having the molecule can be expected to have potential application in novel switching devices.

Original language	English
Article number	015301
Journal	Nanotechnology
Volume	21
Issue number	1
DOIs	https://doi.org/10.1088/0957-4484/21/1/015301
Publication status	Published - 2010

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Materials Science(all)
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

Access to Document

10.1088/0957-4484/21/1/015301

Cite this

@article{5dbd431712274d519cbb9c6a42662300,

title = "The fabrication of Ni quantum cross devices with a 17nm junction and their current-voltage characteristics",

abstract = "Quantum cross (QC) devices which consist of two Ni thin films deposited on polyethylene naphthalate substrates with their edges crossing have been fabricated and their current-voltage characteristics have been investigated. The cross-sectional area between the two Ni electrodes, which was obtained without the use of electron-beam or optical lithography, can be as small as 17nm × 17nm. We have successfully obtained ohmic current-voltage characteristics, which show good agreement with calculation results within the framework of the modified Anderson model. The calculated results also predict a high switching ratio in excess of 100 000:1 for QC devices having the molecule sandwiched between the Ni electrodes. This indicates that QC devices having the molecule can be expected to have potential application in novel switching devices.",

author = "Hideo Kaiju and Kenji Kondo and Akito Ono and Nobuyoshi Kawaguchi and Jonghan Won and Akihiko Hirata and Manabu Ishimaru and Yoshihiko Hirotsu and Akira Ishibashi",

year = "2010",

doi = "10.1088/0957-4484/21/1/015301",

language = "English",

volume = "21",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "IOP Publishing Ltd.",

number = "1",

}

TY - JOUR

T1 - The fabrication of Ni quantum cross devices with a 17nm junction and their current-voltage characteristics

AU - Kaiju, Hideo

AU - Kondo, Kenji

AU - Ono, Akito

AU - Kawaguchi, Nobuyoshi

AU - Won, Jonghan

AU - Hirata, Akihiko

AU - Ishimaru, Manabu

AU - Hirotsu, Yoshihiko

AU - Ishibashi, Akira

PY - 2010

Y1 - 2010

N2 - Quantum cross (QC) devices which consist of two Ni thin films deposited on polyethylene naphthalate substrates with their edges crossing have been fabricated and their current-voltage characteristics have been investigated. The cross-sectional area between the two Ni electrodes, which was obtained without the use of electron-beam or optical lithography, can be as small as 17nm × 17nm. We have successfully obtained ohmic current-voltage characteristics, which show good agreement with calculation results within the framework of the modified Anderson model. The calculated results also predict a high switching ratio in excess of 100 000:1 for QC devices having the molecule sandwiched between the Ni electrodes. This indicates that QC devices having the molecule can be expected to have potential application in novel switching devices.

AB - Quantum cross (QC) devices which consist of two Ni thin films deposited on polyethylene naphthalate substrates with their edges crossing have been fabricated and their current-voltage characteristics have been investigated. The cross-sectional area between the two Ni electrodes, which was obtained without the use of electron-beam or optical lithography, can be as small as 17nm × 17nm. We have successfully obtained ohmic current-voltage characteristics, which show good agreement with calculation results within the framework of the modified Anderson model. The calculated results also predict a high switching ratio in excess of 100 000:1 for QC devices having the molecule sandwiched between the Ni electrodes. This indicates that QC devices having the molecule can be expected to have potential application in novel switching devices.

UR - http://www.scopus.com/inward/record.url?scp=71549132567&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=71549132567&partnerID=8YFLogxK

U2 - 10.1088/0957-4484/21/1/015301

DO - 10.1088/0957-4484/21/1/015301

M3 - Article

C2 - 19946173

AN - SCOPUS:71549132567

SN - 0957-4484

VL - 21

JO - Nanotechnology

JF - Nanotechnology

IS - 1

M1 - 015301

ER -

The fabrication of Ni quantum cross devices with a 17nm junction and their current-voltage characteristics

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this