The influence of impurity profile on ultra-shallow GaAs sidewall tunnel junction characteristics

Takeo Ohno; Yutaka Oyama; Jun ichi Nishizawa

doi:10.1016/j.apsusc.2006.02.131

The influence of impurity profile on ultra-shallow GaAs sidewall tunnel junction characteristics

Takeo Ohno, Yutaka Oyama, Jun ichi Nishizawa

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Dynamic SIMS has been applied to investigate the influence of impurity profiles on the characteristics of ultra-shallow GaAs sidewall tunnel junctions. SIMS depth profile on test-element-group areas on the device chips have shown that the Be profiles pile-up, with concentrations of up to 10 ²⁰ cm ^-3 at the tunnel junction interfaces. This result illustrates one of the dominant causes why very high peak current densities are achieved.

Original language	English
Pages (from-to)	7283-7285
Number of pages	3
Journal	Applied Surface Science
Volume	252
Issue number	19
DOIs	https://doi.org/10.1016/j.apsusc.2006.02.131
Publication status	Published - 2006 Jul 30

Keywords

Dynamic SIMS
Epitaxial growth
GaAs
Impurity doping
Semiconductor
Tunnel junction

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/j.apsusc.2006.02.131

Cite this

@article{1016bebb32854bf39d4ac75d175f83d8,

title = "The influence of impurity profile on ultra-shallow GaAs sidewall tunnel junction characteristics",

abstract = " Dynamic SIMS has been applied to investigate the influence of impurity profiles on the characteristics of ultra-shallow GaAs sidewall tunnel junctions. SIMS depth profile on test-element-group areas on the device chips have shown that the Be profiles pile-up, with concentrations of up to 10 20 cm -3 at the tunnel junction interfaces. This result illustrates one of the dominant causes why very high peak current densities are achieved.",

keywords = "Dynamic SIMS, Epitaxial growth, GaAs, Impurity doping, Semiconductor, Tunnel junction",

author = "Takeo Ohno and Yutaka Oyama and Nishizawa, {Jun ichi}",

year = "2006",

month = jul,

day = "30",

doi = "10.1016/j.apsusc.2006.02.131",

language = "English",

volume = "252",

pages = "7283--7285",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

number = "19",

}

TY - JOUR

T1 - The influence of impurity profile on ultra-shallow GaAs sidewall tunnel junction characteristics

AU - Ohno, Takeo

AU - Oyama, Yutaka

AU - Nishizawa, Jun ichi

PY - 2006/7/30

Y1 - 2006/7/30

N2 - Dynamic SIMS has been applied to investigate the influence of impurity profiles on the characteristics of ultra-shallow GaAs sidewall tunnel junctions. SIMS depth profile on test-element-group areas on the device chips have shown that the Be profiles pile-up, with concentrations of up to 10 20 cm -3 at the tunnel junction interfaces. This result illustrates one of the dominant causes why very high peak current densities are achieved.

AB - Dynamic SIMS has been applied to investigate the influence of impurity profiles on the characteristics of ultra-shallow GaAs sidewall tunnel junctions. SIMS depth profile on test-element-group areas on the device chips have shown that the Be profiles pile-up, with concentrations of up to 10 20 cm -3 at the tunnel junction interfaces. This result illustrates one of the dominant causes why very high peak current densities are achieved.

KW - Dynamic SIMS

KW - Epitaxial growth

KW - GaAs

KW - Impurity doping

KW - Semiconductor

KW - Tunnel junction

UR - http://www.scopus.com/inward/record.url?scp=33747158513&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33747158513&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2006.02.131

DO - 10.1016/j.apsusc.2006.02.131

M3 - Article

AN - SCOPUS:33747158513

SN - 0169-4332

VL - 252

SP - 7283

EP - 7285

JO - Applied Surface Science

JF - Applied Surface Science

IS - 19

ER -

The influence of impurity profile on ultra-shallow GaAs sidewall tunnel junction characteristics

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this