The optimum physical targets of the 3-dimensional vertical FG NAND flash memory cell arrays with the extended sidewall control gate (ESCG) structure

Recently, the 3-dimensional (3-D) vertical Floating Gate (FG) type NAND flash memory cell arrays with the Extended Sidewall Control Gate (ESCG) was proposed [7]. Using this novel structure, we successfully implemented superior program speed, read current, and less interference characteristics, by the high Control Gate (CG) coupling ratio with less interference capacitance and highly electrical inverted S/D technique. However, the process stability of the ESCG structure has not been sufficiently confirmed such as the variations of the physical dimensions. In this paper, we intensively investigated the electrical dependency according to the physical dimensions of ESCG, such as the line and spacing of ESCG and the thickness of barrier oxide. Using the 2-dimentional (2-D) TCAD simulations, we compared the basic characteristics of the FG type flash cell operation, in the aspect of program speed, read current, and interference effect. Finally, we check the process window and suggest the optimum target of the ESCG structure for reliable flash cell operation. From above all, we confirmed that this 3-dimensional vertical FG NAND flash memory cell arrays using the ESCG structure is the most attractive candidate for terabit 3-D vertical NAND flash cell array.