The process of GaN single crystal growth by the Na flux method with Na vapor

Takahiro Yamada, Hisanori Yamane, Hirokazu Iwata, Seiji Sarayama

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18 Citations (Scopus)


Ga melts were heated in a boron nitride crucible at 800 °C and 5 MPa of N2 for 8-200 h with Na vapor. Colorless and transparent prismatic GaN single crystals grew from a Na-Ga melt which was formed by dissolution of Na from the gas phase. Nitrogen was probably introduced into the melt with Na. The time dependence of the Na fraction (rNa=Na/(Na+Ga)) in the melts and the yields of GaN were investigated. rNa increased to 0.39-0.43 within 100 h, and then became almost constant at this value. The yield of GaN was less than 2% at 50 h. The yield increased linearly with heating time after 75 h, and reached 57% at 200 h. GaN single crystals with a size of 1.5 mm long were obtained on the bottom of the crucible wall. The largest crystals (3.0 mm-long and 1.2 mm-wide) grew at the edges of the melt and of the GaN crystal formation area near the bottom wall of the crucible.

Original languageEnglish
Pages (from-to)494-497
Number of pages4
JournalJournal of Crystal Growth
Issue number2
Publication statusPublished - 2006 Jan 15


  • A2. Growth from solutions
  • A2. Single crystal growth
  • B1. Gallium compounds
  • B1. Nitrides
  • B2. Semiconducting III-V materials


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