The role of the temperature on the scattering mechanisms limiting the electron mobility in metal-oxide-semiconductor field-effect-transistors fabricated on (110) silicon-oriented wafers

Philippe Gaubert; Akinobu Teramoto; Shigetoshi Sugawa; Tadahiro Ohmi

doi:10.1109/ESSDERC.2012.6343371

The role of the temperature on the scattering mechanisms limiting the electron mobility in metal-oxide-semiconductor field-effect-transistors fabricated on (110) silicon-oriented wafers

Philippe Gaubert, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi

New Industry Creation Hatchery Center (NICHe)

Tohoku University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Citations (Scopus)

Abstract

The scattering mechanisms limiting the electron mobility in Si(110) MOSFETs have been studied in function of the temperature. They have been compared to the ones limiting the electron mobility in Si(100) MOSFETs. It appeared that the lower electron mobility encountered for the (110) orientation was coming from a stronger limitation due to the sole Coulomb and surface roughness scatterings. Indeed, the phonon-limited mobility have been found similar for both orientations. Furthermore, contrary to what it is commonly assumed, the surface roughness scattering mechanisms are not independent of the temperature. Like the Coulomb-limited mobility, the surface roughness-limited mobility will greatly vary at high temperature while they will reach a constant value when the temperature will be reduced.

Original language	English
Title of host publication	2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012
Pages	213-216
Number of pages	4
DOIs	https://doi.org/10.1109/ESSDERC.2012.6343371
Publication status	Published - 2012
Event	42nd European Solid-State Device Research Conference, ESSDERC 2012 - Bordeaux, France Duration: 2012 Sept 17 → 2012 Sept 21

Publication series

Name	European Solid-State Device Research Conference
ISSN (Print)	1930-8876

Conference

Conference	42nd European Solid-State Device Research Conference, ESSDERC 2012
Country/Territory	France
City	Bordeaux
Period	12/9/17 → 12/9/21

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10.1109/ESSDERC.2012.6343371

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Gaubert, P., Teramoto, A., Sugawa, S., & Ohmi, T. (2012). The role of the temperature on the scattering mechanisms limiting the electron mobility in metal-oxide-semiconductor field-effect-transistors fabricated on (110) silicon-oriented wafers. In 2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012 (pp. 213-216). Article 6343371 (European Solid-State Device Research Conference). https://doi.org/10.1109/ESSDERC.2012.6343371

Gaubert, Philippe ; Teramoto, Akinobu ; Sugawa, Shigetoshi et al. / The role of the temperature on the scattering mechanisms limiting the electron mobility in metal-oxide-semiconductor field-effect-transistors fabricated on (110) silicon-oriented wafers. 2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012. 2012. pp. 213-216 (European Solid-State Device Research Conference).

@inproceedings{927ea67d1bf94a3c8d95ed54a1e5e4bd,

title = "The role of the temperature on the scattering mechanisms limiting the electron mobility in metal-oxide-semiconductor field-effect-transistors fabricated on (110) silicon-oriented wafers",

abstract = "The scattering mechanisms limiting the electron mobility in Si(110) MOSFETs have been studied in function of the temperature. They have been compared to the ones limiting the electron mobility in Si(100) MOSFETs. It appeared that the lower electron mobility encountered for the (110) orientation was coming from a stronger limitation due to the sole Coulomb and surface roughness scatterings. Indeed, the phonon-limited mobility have been found similar for both orientations. Furthermore, contrary to what it is commonly assumed, the surface roughness scattering mechanisms are not independent of the temperature. Like the Coulomb-limited mobility, the surface roughness-limited mobility will greatly vary at high temperature while they will reach a constant value when the temperature will be reduced.",

author = "Philippe Gaubert and Akinobu Teramoto and Shigetoshi Sugawa and Tadahiro Ohmi",

year = "2012",

doi = "10.1109/ESSDERC.2012.6343371",

language = "English",

isbn = "9781467317078",

series = "European Solid-State Device Research Conference",

pages = "213--216",

booktitle = "2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012",

note = "42nd European Solid-State Device Research Conference, ESSDERC 2012 ; Conference date: 17-09-2012 Through 21-09-2012",

}

Gaubert, P, Teramoto, A, Sugawa, S & Ohmi, T 2012, The role of the temperature on the scattering mechanisms limiting the electron mobility in metal-oxide-semiconductor field-effect-transistors fabricated on (110) silicon-oriented wafers. in 2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012., 6343371, European Solid-State Device Research Conference, pp. 213-216, 42nd European Solid-State Device Research Conference, ESSDERC 2012, Bordeaux, France, 12/9/17. https://doi.org/10.1109/ESSDERC.2012.6343371

The role of the temperature on the scattering mechanisms limiting the electron mobility in metal-oxide-semiconductor field-effect-transistors fabricated on (110) silicon-oriented wafers. / Gaubert, Philippe; Teramoto, Akinobu; Sugawa, Shigetoshi et al.
2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012. 2012. p. 213-216 6343371 (European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - The role of the temperature on the scattering mechanisms limiting the electron mobility in metal-oxide-semiconductor field-effect-transistors fabricated on (110) silicon-oriented wafers

AU - Gaubert, Philippe

AU - Teramoto, Akinobu

AU - Sugawa, Shigetoshi

AU - Ohmi, Tadahiro

PY - 2012

Y1 - 2012

N2 - The scattering mechanisms limiting the electron mobility in Si(110) MOSFETs have been studied in function of the temperature. They have been compared to the ones limiting the electron mobility in Si(100) MOSFETs. It appeared that the lower electron mobility encountered for the (110) orientation was coming from a stronger limitation due to the sole Coulomb and surface roughness scatterings. Indeed, the phonon-limited mobility have been found similar for both orientations. Furthermore, contrary to what it is commonly assumed, the surface roughness scattering mechanisms are not independent of the temperature. Like the Coulomb-limited mobility, the surface roughness-limited mobility will greatly vary at high temperature while they will reach a constant value when the temperature will be reduced.

AB - The scattering mechanisms limiting the electron mobility in Si(110) MOSFETs have been studied in function of the temperature. They have been compared to the ones limiting the electron mobility in Si(100) MOSFETs. It appeared that the lower electron mobility encountered for the (110) orientation was coming from a stronger limitation due to the sole Coulomb and surface roughness scatterings. Indeed, the phonon-limited mobility have been found similar for both orientations. Furthermore, contrary to what it is commonly assumed, the surface roughness scattering mechanisms are not independent of the temperature. Like the Coulomb-limited mobility, the surface roughness-limited mobility will greatly vary at high temperature while they will reach a constant value when the temperature will be reduced.

UR - http://www.scopus.com/inward/record.url?scp=84870608375&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84870608375&partnerID=8YFLogxK

U2 - 10.1109/ESSDERC.2012.6343371

DO - 10.1109/ESSDERC.2012.6343371

M3 - Conference contribution

AN - SCOPUS:84870608375

SN - 9781467317078

T3 - European Solid-State Device Research Conference

SP - 213

EP - 216

BT - 2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012

T2 - 42nd European Solid-State Device Research Conference, ESSDERC 2012

Y2 - 17 September 2012 through 21 September 2012

ER -

Gaubert P, Teramoto A, Sugawa S, Ohmi T. The role of the temperature on the scattering mechanisms limiting the electron mobility in metal-oxide-semiconductor field-effect-transistors fabricated on (110) silicon-oriented wafers. In 2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012. 2012. p. 213-216. 6343371. (European Solid-State Device Research Conference). doi: 10.1109/ESSDERC.2012.6343371

The role of the temperature on the scattering mechanisms limiting the electron mobility in metal-oxide-semiconductor field-effect-transistors fabricated on (110) silicon-oriented wafers

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