TY - JOUR
T1 - The switching characteristics of free layer of patterned magnetic tunnel junction device
AU - Chen, C. C.
AU - Wang, Y. R.
AU - Kuo, C. Y.
AU - Wu, J. C.
AU - Horng, Lance
AU - Wu, Teho
AU - Yoshimura, S.
AU - Tsunoda, M.
AU - Takahashi, M.
PY - 2006/9
Y1 - 2006/9
N2 - The free layer switching properties of microstructured magnetic tunnel junctions have been investigated. The M-H loop of nonpatterned film shows ferromagnetic coupling with 10 Oe shifting associated with the interlayer roughness coupling. The MR curve of the patterned element shows stepped minor loop, less loop shifting, and larger coercive field due to shape anisotropy and stray field effects. MFM images of the element show nonuniform domain structures during reversal process.
AB - The free layer switching properties of microstructured magnetic tunnel junctions have been investigated. The M-H loop of nonpatterned film shows ferromagnetic coupling with 10 Oe shifting associated with the interlayer roughness coupling. The MR curve of the patterned element shows stepped minor loop, less loop shifting, and larger coercive field due to shape anisotropy and stray field effects. MFM images of the element show nonuniform domain structures during reversal process.
KW - Free layer switching
KW - Magnetic tunnel junctions
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U2 - 10.1016/j.jmmm.2006.02.020
DO - 10.1016/j.jmmm.2006.02.020
M3 - Article
AN - SCOPUS:33747139716
SN - 0304-8853
VL - 304
SP - e285-e287
JO - Journal of Magnetism and Magnetic Materials
JF - Journal of Magnetism and Magnetic Materials
IS - 1
ER -