TY - GEN
T1 - Theoretical study on strain-controllable gradient Schottky barrier of dumbbell-shape graphene nanoribbon for highly sensitive strain sensors
AU - Zhang, Qinqiang
AU - Suzuki, Ken
AU - Miura, Hideo
N1 - Funding Information:
This research activity has been supported partially by Japanese special coordination funds 266 for promoting science and technology, Japanese Grants-in-aid for Scientific Research, and Tohoku 267 University. This research was supported partly by JSPS KAKENHI Grant Number JP20H02022. The authors acknowledge Center for Computational Materials Science, Institute for Materials Research, Tohoku University for the use of MASAMUNE-IMR.
Publisher Copyright:
© 2021 IEEE.
PY - 2021/9/27
Y1 - 2021/9/27
N2 - The strain-induced change of electronic conduction properties in the dumbbell-shape graphene nanoribbon structure and the electronic band structure around the jointed interface between the metallic GNR (Graphene NanoRibbon) and the semiconductive GNR in the proposed dumbbell-shape structure were analyzed by using first-principles calculations in this study. The dumbbell-shape GNR exhibited a complicated current-voltage characteristics under the application of uniaxial strain. The main reason for the complicated behavior was attributed to the existence of the strain-induced change of gradient Schottky barrier around the newly formed atomic seamless interface between the metallic GNR and semiconductive GNR under the application of uniaxial tensile strain. The band diagram of the newly formed gradient Schottky barrier around atomic seamless interface was completely different with that of the conventional step-like metal-semiconductor interface. This energy height of gradient Schottky barrier can be modulated by applying an appropriate range of tensile strain. This strain-induced change of the electronic band structure of dumbbell-shape GNR showed a great potential for developing a highly sensitive strain sensor with stable electronic performance.
AB - The strain-induced change of electronic conduction properties in the dumbbell-shape graphene nanoribbon structure and the electronic band structure around the jointed interface between the metallic GNR (Graphene NanoRibbon) and the semiconductive GNR in the proposed dumbbell-shape structure were analyzed by using first-principles calculations in this study. The dumbbell-shape GNR exhibited a complicated current-voltage characteristics under the application of uniaxial strain. The main reason for the complicated behavior was attributed to the existence of the strain-induced change of gradient Schottky barrier around the newly formed atomic seamless interface between the metallic GNR and semiconductive GNR under the application of uniaxial tensile strain. The band diagram of the newly formed gradient Schottky barrier around atomic seamless interface was completely different with that of the conventional step-like metal-semiconductor interface. This energy height of gradient Schottky barrier can be modulated by applying an appropriate range of tensile strain. This strain-induced change of the electronic band structure of dumbbell-shape GNR showed a great potential for developing a highly sensitive strain sensor with stable electronic performance.
KW - atomic seamless interface
KW - dumbbell-shape
KW - first-principles
KW - graphene nanoribbon
KW - strain-controlled
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U2 - 10.1109/SISPAD54002.2021.9592548
DO - 10.1109/SISPAD54002.2021.9592548
M3 - Conference contribution
AN - SCOPUS:85119414733
T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
SP - 171
EP - 174
BT - SISPAD 2021 - 2021 International Conference on Simulation of Semiconductor Processes and Devices, Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 26th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2021
Y2 - 27 September 2021 through 29 September 2021
ER -