Theory of Fano-Kondo effect of transport properties through quantum dots

Isao Maruyama, Naokazu Shibata, Kazuo Ueda

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)


The Fano-Kondo effect in zero-bias conductance is investigated based on a theoretical model of a T-shaped quantum dot. The conductance as a function of gate voltage is generally characterized by the Fano asymmetric parameter q. With varying temperature the conductance shows a crossover between the high- and low-temperature regions compared with the Kondo temperature TK. It is characterized by two Fano asymmetric peaks at high temperatures and by the Fano-Kondo plateau inside a Fano peak at low temperatures. Temperature dependence of conductance is calculated numerically by the finite temperature density matrix renormalization group method (FT-DMRG).

Original languageEnglish
Pages (from-to)3239-3242
Number of pages4
Journaljournal of the physical society of japan
Issue number12
Publication statusPublished - 2004 Dec
Externally publishedYes


  • Density matrix renormalization group method
  • Fano effect
  • Kondo effect
  • Maximum entropy method
  • Padé approximation
  • Quantum dot

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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