Abstract
The Fano-Kondo effect in zero-bias conductance is investigated based on a theoretical model of a T-shaped quantum dot. The conductance as a function of gate voltage is generally characterized by the Fano asymmetric parameter q. With varying temperature the conductance shows a crossover between the high- and low-temperature regions compared with the Kondo temperature TK. It is characterized by two Fano asymmetric peaks at high temperatures and by the Fano-Kondo plateau inside a Fano peak at low temperatures. Temperature dependence of conductance is calculated numerically by the finite temperature density matrix renormalization group method (FT-DMRG).
| Original language | English |
|---|---|
| Pages (from-to) | 3239-3242 |
| Number of pages | 4 |
| Journal | journal of the physical society of japan |
| Volume | 73 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2004 Dec |
| Externally published | Yes |
Keywords
- Density matrix renormalization group method
- Fano effect
- Kondo effect
- Maximum entropy method
- Padé approximation
- Quantum dot
ASJC Scopus subject areas
- Physics and Astronomy(all)