Theory of workfunction control of silicides by doping for future Si-Nano-devices based on fundamental physics of why silicides exist in nature

T. Nakayama; K. Kakushima; O. Nakatsuka; Y. Machida; S. Sotome; T. Matsuki; K. Ohmori; H. Iwai; S. Zaima; T. Chikyow; K. Shiraishi; K. Yamada

doi:10.1109/IEDM.2010.5703369

Theory of workfunction control of silicides by doping for future Si-Nano-devices based on fundamental physics of why silicides exist in nature

T. Nakayama, K. Kakushima, O. Nakatsuka, Y. Machida, S. Sotome, T. Matsuki, K. Ohmori, H. Iwai, S. Zaima, T. Chikyow, K. Shiraishi, K. Yamada

Advanced Institute for Materials Research (AIMR)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We have revealed by the first-principles calculations that the workfunction of silicide is controlled by the high-density dopant existing in the silicide itself, and the selective doping into Si or Ni site is essential to realize such control. In addition, we showed that these doping properties are closely related to fundamental physics of silicides; why Ni_xSi_y exists and why Au_xSi_y not exists in nature. These findings might give a new guideline to design silicide-electrode contacts for future 10nm nano-devices.

Original language	English
Title of host publication	2010 IEEE International Electron Devices Meeting, IEDM 2010
Pages	15.5.1-15.5.4
DOIs	https://doi.org/10.1109/IEDM.2010.5703369
Publication status	Published - 2010
Event	2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States Duration: 2010 Dec 6 → 2010 Dec 8

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2010 IEEE International Electron Devices Meeting, IEDM 2010
Country/Territory	United States
City	San Francisco, CA
Period	10/12/6 → 10/12/8

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.2010.5703369

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Nakayama, T., Kakushima, K., Nakatsuka, O., Machida, Y., Sotome, S., Matsuki, T., Ohmori, K., Iwai, H., Zaima, S., Chikyow, T., Shiraishi, K., & Yamada, K. (2010). Theory of workfunction control of silicides by doping for future Si-Nano-devices based on fundamental physics of why silicides exist in nature. In 2010 IEEE International Electron Devices Meeting, IEDM 2010 (pp. 15.5.1-15.5.4). [5703369] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2010.5703369

Theory of workfunction control of silicides by doping for future Si-Nano-devices based on fundamental physics of why silicides exist in nature. / Nakayama, T.; Kakushima, K.; Nakatsuka, O. et al.

2010 IEEE International Electron Devices Meeting, IEDM 2010. 2010. p. 15.5.1-15.5.4 5703369 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nakayama, T, Kakushima, K, Nakatsuka, O, Machida, Y, Sotome, S, Matsuki, T, Ohmori, K, Iwai, H, Zaima, S, Chikyow, T, Shiraishi, K & Yamada, K 2010, Theory of workfunction control of silicides by doping for future Si-Nano-devices based on fundamental physics of why silicides exist in nature. in 2010 IEEE International Electron Devices Meeting, IEDM 2010., 5703369, Technical Digest - International Electron Devices Meeting, IEDM, pp. 15.5.1-15.5.4, 2010 IEEE International Electron Devices Meeting, IEDM 2010, San Francisco, CA, United States, 10/12/6. https://doi.org/10.1109/IEDM.2010.5703369

Nakayama T, Kakushima K, Nakatsuka O, Machida Y, Sotome S, Matsuki T et al. Theory of workfunction control of silicides by doping for future Si-Nano-devices based on fundamental physics of why silicides exist in nature. In 2010 IEEE International Electron Devices Meeting, IEDM 2010. 2010. p. 15.5.1-15.5.4. 5703369. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2010.5703369

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abstract = "We have revealed by the first-principles calculations that the workfunction of silicide is controlled by the high-density dopant existing in the silicide itself, and the selective doping into Si or Ni site is essential to realize such control. In addition, we showed that these doping properties are closely related to fundamental physics of silicides; why NixSiy exists and why AuxSiy not exists in nature. These findings might give a new guideline to design silicide-electrode contacts for future 10nm nano-devices.",

author = "T. Nakayama and K. Kakushima and O. Nakatsuka and Y. Machida and S. Sotome and T. Matsuki and K. Ohmori and H. Iwai and S. Zaima and T. Chikyow and K. Shiraishi and K. Yamada",

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AU - Machida, Y.

AU - Sotome, S.

AU - Matsuki, T.

AU - Ohmori, K.

AU - Iwai, H.

AU - Zaima, S.

AU - Chikyow, T.

AU - Shiraishi, K.

AU - Yamada, K.

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AB - We have revealed by the first-principles calculations that the workfunction of silicide is controlled by the high-density dopant existing in the silicide itself, and the selective doping into Si or Ni site is essential to realize such control. In addition, we showed that these doping properties are closely related to fundamental physics of silicides; why NixSiy exists and why AuxSiy not exists in nature. These findings might give a new guideline to design silicide-electrode contacts for future 10nm nano-devices.

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Theory of workfunction control of silicides by doping for future Si-Nano-devices based on fundamental physics of why silicides exist in nature

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