Abstract
Thermal cycling was performed in Al-1mo%Si thin films deposited on Si wafers. After a given number of cycling between room temperature and 723 K, residual stress was measured at room temperature. Residual stress was found to increase with increasing the cycling number up to the 4th cycle, followed by further a continuous decrease by further cycling. The initial increase was found to be related to the increase of lattice dislocations and their tangling. The following decrease was caused by crack formation along grain boundaries or by film delamination in some cases.
| Original language | English |
|---|---|
| Pages (from-to) | 319-324 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 505 |
| Publication status | Published - 1998 |
| Event | Proceedings of the 1997 MRS Fall Meeting - Boston, MA, USA Duration: 1997 Nov 30 → 1997 Dec 4 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering