Thermal cycling fatigue in aluminum-alloy thin films on silicon substrate

J. Koike, S. Utsunomiya, K. Maruyama

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)


Thermal cycling was performed in Al-1mo%Si thin films deposited on Si wafers. After a given number of cycling between room temperature and 723 K, residual stress was measured at room temperature. Residual stress was found to increase with increasing the cycling number up to the 4th cycle, followed by further a continuous decrease by further cycling. The initial increase was found to be related to the increase of lattice dislocations and their tangling. The following decrease was caused by crack formation along grain boundaries or by film delamination in some cases.

Original languageEnglish
Pages (from-to)319-324
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 1998
EventProceedings of the 1997 MRS Fall Meeting - Boston, MA, USA
Duration: 1997 Nov 301997 Dec 4

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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