Thermal effects in atomic-order nitridation of Si by a nitrogen plasma

Takuya Seino, Daisuke Muto, Takashi Matsuura, Junichi Murota

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)


The thermal effects in atomic-order nitridation of Si(100) by an electron-cyclotron resonance (ECR) nitrogen plasma were studied by controlling the Si surface temperature. Based on the relationship between the nitridation characteristics and the Si surface temperature in the nitrogen plasma, the thermal effects and the contribution of radicals and ions to atomic-order nitridation were outlined.

Original languageEnglish
Pages (from-to)1431-1435
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number4
Publication statusPublished - 2002 Jul
EventProceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces - Santa Fe, NM, United States
Duration: 2002 Jan 62002 Jan 10

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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