Abstract
The thermal effects in atomic-order nitridation of Si(100) by an electron-cyclotron resonance (ECR) nitrogen plasma were studied by controlling the Si surface temperature. Based on the relationship between the nitridation characteristics and the Si surface temperature in the nitrogen plasma, the thermal effects and the contribution of radicals and ions to atomic-order nitridation were outlined.
| Original language | English |
|---|---|
| Pages (from-to) | 1431-1435 |
| Number of pages | 5 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 20 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2002 Jul |
| Event | Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces - Santa Fe, NM, United States Duration: 2002 Jan 6 → 2002 Jan 10 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering