Thermal stability of TiN/HfSiON gate stack structures studied by synchrotron-radiation photoemission spectroscopy

S. Toyoda; H. Kamada; H. Kumigashira; M. Oshima; K. Iwamoto; T. Sukegawa; Z. Liu

doi:10.1063/1.3532846

Thermal stability of TiN/HfSiON gate stack structures studied by synchrotron-radiation photoemission spectroscopy

S. Toyoda, H. Kamada, H. Kumigashira, M. Oshima, K. Iwamoto, T. Sukegawa, Z. Liu

IMRAM - Division of Inorganic Material Research

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We have investigated the thermal stability of TiN/HfSiON gate stack structures using synchrotron-radiation photoemission spectroscopy. Spectral intensities of the Si-oxide components in Si 2p core-level spectra systematically increase with annealing temperature, which strongly depends on the thickness of the TiN metal gate layer. Changes brought by annealing procedures in depth profiles of atomic concentration indicate segregation of Si-atoms at the TiN surface. Furthermore, chemical-state-resolved depth analyses by angle-resolved photoemission spectroscopy suggest formation of TiSi _x and HfN_y components due to chemical bond breaking in the HfSiON layer during TiN film growth. This can be related to the degradation of thermal stability.

Original language	English
Article number	262903
Journal	Applied Physics Letters
Volume	97
Issue number	26
DOIs	https://doi.org/10.1063/1.3532846
Publication status	Published - 2010 Dec 27

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@article{28d3c9f5b2014a8ebbfb130dd05c55e2,

title = "Thermal stability of TiN/HfSiON gate stack structures studied by synchrotron-radiation photoemission spectroscopy",

abstract = "We have investigated the thermal stability of TiN/HfSiON gate stack structures using synchrotron-radiation photoemission spectroscopy. Spectral intensities of the Si-oxide components in Si 2p core-level spectra systematically increase with annealing temperature, which strongly depends on the thickness of the TiN metal gate layer. Changes brought by annealing procedures in depth profiles of atomic concentration indicate segregation of Si-atoms at the TiN surface. Furthermore, chemical-state-resolved depth analyses by angle-resolved photoemission spectroscopy suggest formation of TiSi x and HfNy components due to chemical bond breaking in the HfSiON layer during TiN film growth. This can be related to the degradation of thermal stability.",

author = "S. Toyoda and H. Kamada and H. Kumigashira and M. Oshima and K. Iwamoto and T. Sukegawa and Z. Liu",

note = "Funding Information: The authors would like to thank the Semiconductor Leading Edge Technologies, Inc. (Selete) for providing the high- gate dielectric samples. This work was also supported by the Semiconductor Technology Academic Research Center (STARC). Synchrotron-radiation photoemission measurements were performed under the project 08S2-003 at the Institute of Materials Structure Science in KEK.",

year = "2010",

month = dec,

day = "27",

doi = "10.1063/1.3532846",

language = "English",

volume = "97",

journal = "Applied Physics Letters",

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T1 - Thermal stability of TiN/HfSiON gate stack structures studied by synchrotron-radiation photoemission spectroscopy

AU - Toyoda, S.

AU - Kamada, H.

AU - Kumigashira, H.

AU - Oshima, M.

AU - Iwamoto, K.

AU - Sukegawa, T.

AU - Liu, Z.

N1 - Funding Information: The authors would like to thank the Semiconductor Leading Edge Technologies, Inc. (Selete) for providing the high- gate dielectric samples. This work was also supported by the Semiconductor Technology Academic Research Center (STARC). Synchrotron-radiation photoemission measurements were performed under the project 08S2-003 at the Institute of Materials Structure Science in KEK.

PY - 2010/12/27

Y1 - 2010/12/27

N2 - We have investigated the thermal stability of TiN/HfSiON gate stack structures using synchrotron-radiation photoemission spectroscopy. Spectral intensities of the Si-oxide components in Si 2p core-level spectra systematically increase with annealing temperature, which strongly depends on the thickness of the TiN metal gate layer. Changes brought by annealing procedures in depth profiles of atomic concentration indicate segregation of Si-atoms at the TiN surface. Furthermore, chemical-state-resolved depth analyses by angle-resolved photoemission spectroscopy suggest formation of TiSi x and HfNy components due to chemical bond breaking in the HfSiON layer during TiN film growth. This can be related to the degradation of thermal stability.

AB - We have investigated the thermal stability of TiN/HfSiON gate stack structures using synchrotron-radiation photoemission spectroscopy. Spectral intensities of the Si-oxide components in Si 2p core-level spectra systematically increase with annealing temperature, which strongly depends on the thickness of the TiN metal gate layer. Changes brought by annealing procedures in depth profiles of atomic concentration indicate segregation of Si-atoms at the TiN surface. Furthermore, chemical-state-resolved depth analyses by angle-resolved photoemission spectroscopy suggest formation of TiSi x and HfNy components due to chemical bond breaking in the HfSiON layer during TiN film growth. This can be related to the degradation of thermal stability.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

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ER -

Thermal stability of TiN/HfSiON gate stack structures studied by synchrotron-radiation photoemission spectroscopy

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