Thermally induced effects in amorphous GeSe2 and GeSe films studied by ultraviolet photoelectron spectroscopy

S. Hino, T. Takahashi, Y. Harada

Research output: Contribution to journalArticlepeer-review

39 Citations (Scopus)

Abstract

During thermal annealing, the changes in the valence states of amorphous GeSe2 and GeSe films deposited on the substrates held at 77 K were observed by UPS. The experimental results are explained in terms of the four (Ge)-two (Se) fold coordination for amorphous GeSe2 and the three(Ge)-three(Se) fold one for amorphous GeSe.

Original languageEnglish
Pages (from-to)379-382
Number of pages4
JournalSolid State Communications
Volume35
Issue number4
DOIs
Publication statusPublished - 1980 Jul

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