Abstract
During thermal annealing, the changes in the valence states of amorphous GeSe2 and GeSe films deposited on the substrates held at 77 K were observed by UPS. The experimental results are explained in terms of the four (Ge)-two (Se) fold coordination for amorphous GeSe2 and the three(Ge)-three(Se) fold one for amorphous GeSe.
Original language | English |
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Pages (from-to) | 379-382 |
Number of pages | 4 |
Journal | Solid State Communications |
Volume | 35 |
Issue number | 4 |
DOIs | |
Publication status | Published - 1980 Jul |