Thermally stable CVD HfOxNy advanced gate dielectrics with poly-Si gate electrode

C. H. Choi; S. J. Rhee; T. S. Jeon; N. Lu; J. H. Sim; R. Clark; Masaaki Niwa; D. L. Kwong

Thermally stable CVD HfO_xN_y advanced gate dielectrics with poly-Si gate electrode

C. H. Choi, S. J. Rhee, T. S. Jeon, N. Lu, J. H. Sim, R. Clark, Masaaki Niwa, D. L. Kwong

Research output: Contribution to journal › Conference article › peer-review

Abstract

In this paper, for the first time, we report high quality CVD hafnium oxynitride (HfO_xN_y) MOSFETs with conventional self-aligned poly-Si gate. These CVD HfOxNy films deposited using TDEAH (Tetrakisdiethylamino hafnium, C₁₆H₄₀N₄Hf) arid NH₃ remain amorphous after 900∼950 °C annealing. Compared to HfO₂, HfOxNy exhibits reduced leakage current by 2∼3 orders of magnitude, excellent boron penetration immunity, superior thermal stability of both EOT and leakage current after high temperature annealing, and excellent reliability.

Original language	English
Pages (from-to)	857-860
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
Publication status	Published - 2002 Dec 1
Externally published	Yes
Event	2002 IEEE International Devices Meeting (IEDM) - San Francisco, CA, United States Duration: 2002 Dec 8 → 2002 Dec 11

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

@article{8f5ad214c1764ea2a7148682b2149164,

title = "Thermally stable CVD HfOxNy advanced gate dielectrics with poly-Si gate electrode",

abstract = "In this paper, for the first time, we report high quality CVD hafnium oxynitride (HfOxNy) MOSFETs with conventional self-aligned poly-Si gate. These CVD HfOxNy films deposited using TDEAH (Tetrakisdiethylamino hafnium, C16H40N4Hf) arid NH3 remain amorphous after 900∼950 °C annealing. Compared to HfO2, HfOxNy exhibits reduced leakage current by 2∼3 orders of magnitude, excellent boron penetration immunity, superior thermal stability of both EOT and leakage current after high temperature annealing, and excellent reliability.",

author = "Choi, {C. H.} and Rhee, {S. J.} and Jeon, {T. S.} and N. Lu and Sim, {J. H.} and R. Clark and Masaaki Niwa and Kwong, {D. L.}",

year = "2002",

month = dec,

day = "1",

language = "English",

pages = "857--860",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2002 IEEE International Devices Meeting (IEDM) ; Conference date: 08-12-2002 Through 11-12-2002",

}

TY - JOUR

T1 - Thermally stable CVD HfOxNy advanced gate dielectrics with poly-Si gate electrode

AU - Choi, C. H.

AU - Rhee, S. J.

AU - Jeon, T. S.

AU - Lu, N.

AU - Sim, J. H.

AU - Clark, R.

AU - Niwa, Masaaki

AU - Kwong, D. L.

PY - 2002/12/1

Y1 - 2002/12/1

N2 - In this paper, for the first time, we report high quality CVD hafnium oxynitride (HfOxNy) MOSFETs with conventional self-aligned poly-Si gate. These CVD HfOxNy films deposited using TDEAH (Tetrakisdiethylamino hafnium, C16H40N4Hf) arid NH3 remain amorphous after 900∼950 °C annealing. Compared to HfO2, HfOxNy exhibits reduced leakage current by 2∼3 orders of magnitude, excellent boron penetration immunity, superior thermal stability of both EOT and leakage current after high temperature annealing, and excellent reliability.

AB - In this paper, for the first time, we report high quality CVD hafnium oxynitride (HfOxNy) MOSFETs with conventional self-aligned poly-Si gate. These CVD HfOxNy films deposited using TDEAH (Tetrakisdiethylamino hafnium, C16H40N4Hf) arid NH3 remain amorphous after 900∼950 °C annealing. Compared to HfO2, HfOxNy exhibits reduced leakage current by 2∼3 orders of magnitude, excellent boron penetration immunity, superior thermal stability of both EOT and leakage current after high temperature annealing, and excellent reliability.

UR - http://www.scopus.com/inward/record.url?scp=0036932242&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036932242&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0036932242

SN - 0163-1918

SP - 857

EP - 860

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - 2002 IEEE International Devices Meeting (IEDM)

Y2 - 8 December 2002 through 11 December 2002

ER -

Thermally stable CVD HfO_xN_y advanced gate dielectrics with poly-Si gate electrode

Abstract

ASJC Scopus subject areas

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