Thermally stimulated-current observation of hole traps in undoped semi-insulating GaAs and their photoquenching behavior

Maki Suemitsu; Yoshitomo Sagae; Nobuo Miyamoto

doi:10.1063/1.369653

Thermally stimulated-current observation of hole traps in undoped semi-insulating GaAs and their photoquenching behavior

Maki Suemitsu, Yoshitomo Sagae, Nobuo Miyamoto

Information Devices Division

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Detailed thermally stimulated-current measurements have been conducted on an undoped. semi-insulating GaAs crystal under 1.06 μm illumination at 15 K. By combining with Hall voltage measurements, we confirmed the presence of hole traps that show similar activation energies with the one proposed for the actuator level in the deep acceptor-mediated photoquenching model of EL2 [Suemitsu et al., Phys. Rev. B 52, 1666 (1995)]. The observed quenching of these hole traps suggests that the actuator level be, most likely, a part of the metastable complex.

Original language	English
Pages (from-to)	3139-3141
Number of pages	3
Journal	Journal of Applied Physics
Volume	85
Issue number	6
DOIs	https://doi.org/10.1063/1.369653
Publication status	Published - 1999 Mar 15

ASJC Scopus subject areas

Physics and Astronomy(all)

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abstract = "Detailed thermally stimulated-current measurements have been conducted on an undoped. semi-insulating GaAs crystal under 1.06 μm illumination at 15 K. By combining with Hall voltage measurements, we confirmed the presence of hole traps that show similar activation energies with the one proposed for the actuator level in the deep acceptor-mediated photoquenching model of EL2 [Suemitsu et al., Phys. Rev. B 52, 1666 (1995)]. The observed quenching of these hole traps suggests that the actuator level be, most likely, a part of the metastable complex.",

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AU - Sagae, Yoshitomo

AU - Miyamoto, Nobuo

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Y1 - 1999/3/15

N2 - Detailed thermally stimulated-current measurements have been conducted on an undoped. semi-insulating GaAs crystal under 1.06 μm illumination at 15 K. By combining with Hall voltage measurements, we confirmed the presence of hole traps that show similar activation energies with the one proposed for the actuator level in the deep acceptor-mediated photoquenching model of EL2 [Suemitsu et al., Phys. Rev. B 52, 1666 (1995)]. The observed quenching of these hole traps suggests that the actuator level be, most likely, a part of the metastable complex.

AB - Detailed thermally stimulated-current measurements have been conducted on an undoped. semi-insulating GaAs crystal under 1.06 μm illumination at 15 K. By combining with Hall voltage measurements, we confirmed the presence of hole traps that show similar activation energies with the one proposed for the actuator level in the deep acceptor-mediated photoquenching model of EL2 [Suemitsu et al., Phys. Rev. B 52, 1666 (1995)]. The observed quenching of these hole traps suggests that the actuator level be, most likely, a part of the metastable complex.

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Thermally stimulated-current observation of hole traps in undoped semi-insulating GaAs and their photoquenching behavior

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