TY - JOUR
T1 - Thermodynamic analysis of SiC polytype growth by physical vapor transport method
AU - Kakimoto, K.
AU - Gao, B.
AU - Shiramomo, T.
AU - Nakano, S.
AU - Nishizawa, Shi Ichi
N1 - Funding Information:
This work was supported by a Grant-in-Aid for Scientific Research (B) 19360012 and a grant-in-aid for the creation of innovation through business-academy-public sector cooperation from the Japanese Ministry of Education, Science, Sports and Culture .
PY - 2011/6/1
Y1 - 2011/6/1
N2 - Crystal growth of a certain polytype of SiC in a process of physical vapor transport was studied on the basis of classical thermodynamic nucleation theory in conjunction with numerical results obtained from a global model. Formation of a certain polytype in the nucleation stage is determined by the energy balance among surface energy, formation energy and supersaturation. The preferential growth condition of a certain polytype was estimated. The value of supersaturation was estimated using a numerical model obtained by a global model that includes species transport as well as heat transport in a furnace. The results of calculation showed that 4H polytype is more stable than 15R, 6H and 3C polytypes. Free energy difference between 4H and 6H polytypes decreased when total pressure in the furnace decreased.
AB - Crystal growth of a certain polytype of SiC in a process of physical vapor transport was studied on the basis of classical thermodynamic nucleation theory in conjunction with numerical results obtained from a global model. Formation of a certain polytype in the nucleation stage is determined by the energy balance among surface energy, formation energy and supersaturation. The preferential growth condition of a certain polytype was estimated. The value of supersaturation was estimated using a numerical model obtained by a global model that includes species transport as well as heat transport in a furnace. The results of calculation showed that 4H polytype is more stable than 15R, 6H and 3C polytypes. Free energy difference between 4H and 6H polytypes decreased when total pressure in the furnace decreased.
KW - A1. Computer simulation
KW - A1. Heat transfer
KW - A1. Substrate
KW - A2. Growth from vapor
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U2 - 10.1016/j.jcrysgro.2011.03.059
DO - 10.1016/j.jcrysgro.2011.03.059
M3 - Article
AN - SCOPUS:79957798370
SN - 0022-0248
VL - 324
SP - 78
EP - 81
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1
ER -