Thermodynamical analysis of polytype stability during PVT growth of SiC using 2D nucleation theory

T. Shiramomo, B. Gao, F. Mercier, S. Nishizawa, S. Nakano, Y. Kangawa, K. Kakimoto

Research output: Contribution to journalArticlepeer-review

22 Citations (Scopus)


We studied dependence of process parameters, such as temperature of a seed, pressure in a furnace and surface polarity of a substrate, on polytypes of SiC in a process of physical vapor transport. The analysis was based on a classical thermodynamic nucleation theory in conjunction with numerical results obtained from a global model. We investigated which polytype was more stable in the nucleation stage by a comparison of nucleation energies of each polytype. The results show that the formation of 4H-SiC was more stable than that of 6H-SiC when we used C-face SiC as a seed. Furthermore, the most stable polytype could change from 4H-SiC to 6H-SiC in a condition of higher supersaturation, with a condition of higher temperature of a seed and lower pressure in a furnace. Meanwhile, the formation of 6H-SiC was more stable than 4H-SiC when Si-face of a seed was used.

Original languageEnglish
Pages (from-to)177-180
Number of pages4
JournalJournal of Crystal Growth
Issue number1
Publication statusPublished - 2012 Aug 1


  • A1. Computer simulation
  • A1. Nucleation
  • A2. Growth from vapor
  • B2. Semiconducting silicon compounds


Dive into the research topics of 'Thermodynamical analysis of polytype stability during PVT growth of SiC using 2D nucleation theory'. Together they form a unique fingerprint.

Cite this