Thermoelectric properties of Ba-Ge based type-III clathrate compounds

Jung Hwan Kim, Norihiko L. Okamoto, Kyosuke Kishida, Katsushi Tanaka, Haruyuki Inui

Research output: Contribution to journalConference articlepeer-review

3 Citations (Scopus)

Abstract

The crystal structures and thermoelectric properties of Ba-Ge based type-III clathrate compounds in Ba-Al-Ge and Ba-In-Ge systems have been investigated as a function of Al and In content. The absolute values of electrical resistivity and Seebeck coefficient increase, while that of lattice thermal conductivity decreases with increasing Al and In content. The increase in electrical resistivity and Seebeck coefficient is discussed in terms of the number of the excess electrons deduced from the Zintl concept, on the other hand, the decrease in lattice thermal conductivity is discussed in terms of an anisotropic deformation of the open-dodecahedron cage encapsulating Ba atom. High ZT values of 0.7 and 0.87 are obtained at 780 and 580 °C for Ba 24Al12Ge88 and Ba24In 16Ge84. respectively.

Original languageEnglish
Pages (from-to)217-222
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume980
Publication statusPublished - 2007
Event2006 MRS Fall Meeting - Boston, MA, United States
Duration: 2006 Nov 272006 Dec 1

Fingerprint

Dive into the research topics of 'Thermoelectric properties of Ba-Ge based type-III clathrate compounds'. Together they form a unique fingerprint.

Cite this