Thermoelectric properties of binary semiconducting intermetallic compounds Al2Ru and Ga2Ru synthesized by spark plasma sintering process

Yoshiki Takagiwa; Yuka Matsubayashi; Akitoshi Suzumura; Junpei Tamura Okada; Kaoru Kimura

doi:10.2320/matertrans.E-M2010807

Thermoelectric properties of binary semiconducting intermetallic compounds Al₂Ru and Ga₂Ru synthesized by spark plasma sintering process

Yoshiki Takagiwa, Yuka Matsubayashi, Akitoshi Suzumura, Junpei Tamura Okada, Kaoru Kimura

IMR - Materials Development Division

The University of Tokyo

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

The authors report the electrical and thermal transport properties of binary semiconducting intermetallic Al₂Ru and Ga₂Ru compounds from 373 to 973 K. We synthesized sintered pellets of Al₂Ru and Ga₂Ru by the spark plasma sintering (SPS) method, resulted in a removal of small amount of a secondary phase and of cracks. The maximum Seebeck coefficient of Al₂Ru and Ga₂Ru shows a large positive value of 200μV/K and 360μV/K, respectively. In particular, a large power factor ∼2.8mW/m-K² was obtained at 773 K in Ga₂Ru compound. The dimensionless figures of merit ZT of sintered Al₂Ru and Ga₂Ru samples monotonically increase with increasing temperature and reach a maximum value of 0.20 and 0.45 at about 873 K and 773 K, respectively

Original language	English
Pages (from-to)	988-993
Number of pages	6
Journal	Materials Transactions
Volume	51
Issue number	5
DOIs	https://doi.org/10.2320/matertrans.E-M2010807
Publication status	Published - 2010 May

Keywords

Narrow-band-gap semiconductor
Ruthenium aluminide
Ruthenium gallide
Spark plasma sintering
Thermoelectric material

Access to Document

10.2320/matertrans.E-M2010807

Cite this

@article{6e54a0d8f95f46868446c547ce25e717,

title = "Thermoelectric properties of binary semiconducting intermetallic compounds Al2Ru and Ga2Ru synthesized by spark plasma sintering process",

abstract = "The authors report the electrical and thermal transport properties of binary semiconducting intermetallic Al2Ru and Ga2Ru compounds from 373 to 973 K. We synthesized sintered pellets of Al2Ru and Ga2Ru by the spark plasma sintering (SPS) method, resulted in a removal of small amount of a secondary phase and of cracks. The maximum Seebeck coefficient of Al2Ru and Ga2Ru shows a large positive value of 200μV/K and 360μV/K, respectively. In particular, a large power factor ∼2.8mW/m-K2 was obtained at 773 K in Ga2Ru compound. The dimensionless figures of merit ZT of sintered Al2Ru and Ga2Ru samples monotonically increase with increasing temperature and reach a maximum value of 0.20 and 0.45 at about 873 K and 773 K, respectively",

keywords = "Narrow-band-gap semiconductor, Ruthenium aluminide, Ruthenium gallide, Spark plasma sintering, Thermoelectric material",

author = "Yoshiki Takagiwa and Yuka Matsubayashi and Akitoshi Suzumura and Okada, {Junpei Tamura} and Kaoru Kimura",

year = "2010",

month = may,

doi = "10.2320/matertrans.E-M2010807",

language = "English",

volume = "51",

pages = "988--993",

journal = "Materials Transactions",

issn = "1345-9678",

publisher = "Japan Institute of Metals (JIM)",

number = "5",

}

TY - JOUR

T1 - Thermoelectric properties of binary semiconducting intermetallic compounds Al2Ru and Ga2Ru synthesized by spark plasma sintering process

AU - Takagiwa, Yoshiki

AU - Matsubayashi, Yuka

AU - Suzumura, Akitoshi

AU - Okada, Junpei Tamura

AU - Kimura, Kaoru

PY - 2010/5

Y1 - 2010/5

N2 - The authors report the electrical and thermal transport properties of binary semiconducting intermetallic Al2Ru and Ga2Ru compounds from 373 to 973 K. We synthesized sintered pellets of Al2Ru and Ga2Ru by the spark plasma sintering (SPS) method, resulted in a removal of small amount of a secondary phase and of cracks. The maximum Seebeck coefficient of Al2Ru and Ga2Ru shows a large positive value of 200μV/K and 360μV/K, respectively. In particular, a large power factor ∼2.8mW/m-K2 was obtained at 773 K in Ga2Ru compound. The dimensionless figures of merit ZT of sintered Al2Ru and Ga2Ru samples monotonically increase with increasing temperature and reach a maximum value of 0.20 and 0.45 at about 873 K and 773 K, respectively

AB - The authors report the electrical and thermal transport properties of binary semiconducting intermetallic Al2Ru and Ga2Ru compounds from 373 to 973 K. We synthesized sintered pellets of Al2Ru and Ga2Ru by the spark plasma sintering (SPS) method, resulted in a removal of small amount of a secondary phase and of cracks. The maximum Seebeck coefficient of Al2Ru and Ga2Ru shows a large positive value of 200μV/K and 360μV/K, respectively. In particular, a large power factor ∼2.8mW/m-K2 was obtained at 773 K in Ga2Ru compound. The dimensionless figures of merit ZT of sintered Al2Ru and Ga2Ru samples monotonically increase with increasing temperature and reach a maximum value of 0.20 and 0.45 at about 873 K and 773 K, respectively

KW - Narrow-band-gap semiconductor

KW - Ruthenium aluminide

KW - Ruthenium gallide

KW - Spark plasma sintering

KW - Thermoelectric material

UR - http://www.scopus.com/inward/record.url?scp=77953994336&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77953994336&partnerID=8YFLogxK

U2 - 10.2320/matertrans.E-M2010807

DO - 10.2320/matertrans.E-M2010807

M3 - Article

AN - SCOPUS:77953994336

SN - 1345-9678

VL - 51

SP - 988

EP - 993

JO - Materials Transactions

JF - Materials Transactions

IS - 5

ER -

Thermoelectric properties of binary semiconducting intermetallic compounds Al₂Ru and Ga₂Ru synthesized by spark plasma sintering process

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this