TY - JOUR
T1 - Thermomigration of molten Cr-Si-C alloy in 4H-SiC at 1873–2273 K
AU - Kawanishi, Sakiko
AU - Yoshikawa, Takeshi
AU - Shibata, Hiroyuki
N1 - Funding Information:
The authors thank to Dr. Uchikoshi and Ms. Shishido at Tohoku University for their helps with impurity measurements by GD-MS and TOF-SIMS. This research was partly supported by the Cooperative Research Program of “NJRC Mater. & Dev.” and JSPS KAKENHI 16 K14445 and 17H04960. We thank Edanz Group (www.edanzediting.com/ac)for editing a draft of this manuscript
Publisher Copyright:
© 2019 Elsevier B.V.
PY - 2019/7/15
Y1 - 2019/7/15
N2 - Thermomigration of molten Cr-Si-C alloys in silicon carbide (SiC)along a quasi-binary Cr-SiC system at 1873–2273 K was evaluated by the temperature gradient zone melting method. Solute diffusivity in the molten alloy and distribution of Cr between 4H-SiC and the alloy were studied, where both properties are important for designing a process for the solution growth of single crystalline 4H-SiC. The migration was found to be controlled by interdiffusion in the molten alloy from the measured migration rate. The obtained interdiffusion coefficients were (0.11–1.3)× 10−7 m2 s−1, and these increased with increasing temperature. The Cr impurities in 4H-SiC were found to be distributed to maintain the thermodynamic equilibration with the alloy, and increased with temperature in the range of (0.26–2.2)× 1017 cm−3. The thermodynamic property of Cr in SiC was assessed, and will enable the solubility of Cr in 4H-SiC grown at various solvent temperatures and compositions to be estimated.
AB - Thermomigration of molten Cr-Si-C alloys in silicon carbide (SiC)along a quasi-binary Cr-SiC system at 1873–2273 K was evaluated by the temperature gradient zone melting method. Solute diffusivity in the molten alloy and distribution of Cr between 4H-SiC and the alloy were studied, where both properties are important for designing a process for the solution growth of single crystalline 4H-SiC. The migration was found to be controlled by interdiffusion in the molten alloy from the measured migration rate. The obtained interdiffusion coefficients were (0.11–1.3)× 10−7 m2 s−1, and these increased with increasing temperature. The Cr impurities in 4H-SiC were found to be distributed to maintain the thermodynamic equilibration with the alloy, and increased with temperature in the range of (0.26–2.2)× 1017 cm−3. The thermodynamic property of Cr in SiC was assessed, and will enable the solubility of Cr in 4H-SiC grown at various solvent temperatures and compositions to be estimated.
KW - A1. Diffusion
KW - A1. Solubility
KW - A1. Thermodynamics
KW - A2. Temperature gradient zone melting method
KW - B1. Silicon carbide
KW - B2. Semiconducting silicon compounds
UR - http://www.scopus.com/inward/record.url?scp=85064592016&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85064592016&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2019.04.022
DO - 10.1016/j.jcrysgro.2019.04.022
M3 - Article
AN - SCOPUS:85064592016
SN - 0022-0248
VL - 518
SP - 73
EP - 80
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
ER -