Thickening of grain-boundary α allotriomorphs in a Ti-Cr alloy by multiple sets of ledges

A computer model is developed to simulate the growth of grain-boundary allotriomorphs having more than one set of growth ledges at their interfaces. The growth is controlled by the volume diffusion of solute to or from the riser of a ledge. The time dependence of the growth rate of two orthogonal sets of ledges is found to be somewhat different from that of a single set of ledges. However, the operation of multiple sets of ledges is unlikely to alter significantly the growth kinetics of grain-boundary allotriomorphs from those predicted from the disordered growth theory, except at small ledge spacings or at short reaction times. Faster growth kinetics of proeutectoid α allotriomorphs than those of either planar or ellipsoidal disordered boundaries which have been reported in a Ti-6.6 at. pet Cr alloy are not likely to be accounted for with the heights and spacings of double sets of ledges actually observed on the interfaces of allotriomorphs. Hence, the grain-and interphase-boundary diffusion-assisted growth of precipitates, (rejector plate mechanism, RPM) appears to be operative during the growth of a allotriomorphs, as previously proposed on the basis of growth-rate measurements.