Thickness dependent characteristics of a copper phthalocyanine thin-film transistor investigated by in situ FET measurement system

Susumu Ikeda; Hidemitsu Yamakawa; Manabu Kiguchi; Manabu Nakayama; Koichiro Saiki; Toshihiro Shimada; Tetsuhiko Miyadera; Ken Tsutsui; Yasuo Wada

doi:10.1080/15421400600699004

Thickness dependent characteristics of a copper phthalocyanine thin-film transistor investigated by in situ FET measurement system

Susumu Ikeda, Hidemitsu Yamakawa, Manabu Kiguchi, Manabu Nakayama, Koichiro Saiki, Toshihiro Shimada, Tetsuhiko Miyadera, Ken Tsutsui, Yasuo Wada

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The influence of active layer thickness on transport characteristics of a copper phthalocyanine thin-film transistor was investigated by using the in situ FET measurement system with the film deposition continued up to several hundred nm in thickness. The drain current and mobility showed maximum values in the early stage of film growth and then decreased with the increasing film thickness. This result suggests that the over-grown layer affects the transport characteristics of the conductive accumulation layer, for example, owing to change of the electric field in the device.

Original language	English
Pages (from-to)	347-351
Number of pages	5
Journal	Molecular crystals and liquid crystals
Volume	455
Issue number	1
DOIs	https://doi.org/10.1080/15421400600699004
Publication status	Published - 2006 Oct 1
Externally published	Yes

Keywords

Copper phthalocyanine
In situ FET measurement
Organic thin-film transistor
Thickness dependence

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

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10.1080/15421400600699004

Cite this

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title = "Thickness dependent characteristics of a copper phthalocyanine thin-film transistor investigated by in situ FET measurement system",

abstract = "The influence of active layer thickness on transport characteristics of a copper phthalocyanine thin-film transistor was investigated by using the in situ FET measurement system with the film deposition continued up to several hundred nm in thickness. The drain current and mobility showed maximum values in the early stage of film growth and then decreased with the increasing film thickness. This result suggests that the over-grown layer affects the transport characteristics of the conductive accumulation layer, for example, owing to change of the electric field in the device.",

keywords = "Copper phthalocyanine, In situ FET measurement, Organic thin-film transistor, Thickness dependence",

author = "Susumu Ikeda and Hidemitsu Yamakawa and Manabu Kiguchi and Manabu Nakayama and Koichiro Saiki and Toshihiro Shimada and Tetsuhiko Miyadera and Ken Tsutsui and Yasuo Wada",

note = "Funding Information: We would like to thank Mr. Toshihiko Kaji for his useful suggestion. This research was supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology, Japan (14GS0207).",

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T1 - Thickness dependent characteristics of a copper phthalocyanine thin-film transistor investigated by in situ FET measurement system

AU - Ikeda, Susumu

AU - Yamakawa, Hidemitsu

AU - Kiguchi, Manabu

AU - Nakayama, Manabu

AU - Saiki, Koichiro

AU - Shimada, Toshihiro

AU - Miyadera, Tetsuhiko

AU - Tsutsui, Ken

AU - Wada, Yasuo

N1 - Funding Information: We would like to thank Mr. Toshihiko Kaji for his useful suggestion. This research was supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology, Japan (14GS0207).

PY - 2006/10/1

Y1 - 2006/10/1

N2 - The influence of active layer thickness on transport characteristics of a copper phthalocyanine thin-film transistor was investigated by using the in situ FET measurement system with the film deposition continued up to several hundred nm in thickness. The drain current and mobility showed maximum values in the early stage of film growth and then decreased with the increasing film thickness. This result suggests that the over-grown layer affects the transport characteristics of the conductive accumulation layer, for example, owing to change of the electric field in the device.

AB - The influence of active layer thickness on transport characteristics of a copper phthalocyanine thin-film transistor was investigated by using the in situ FET measurement system with the film deposition continued up to several hundred nm in thickness. The drain current and mobility showed maximum values in the early stage of film growth and then decreased with the increasing film thickness. This result suggests that the over-grown layer affects the transport characteristics of the conductive accumulation layer, for example, owing to change of the electric field in the device.

KW - Copper phthalocyanine

KW - In situ FET measurement

KW - Organic thin-film transistor

KW - Thickness dependence

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Thickness dependent characteristics of a copper phthalocyanine thin-film transistor investigated by in situ FET measurement system

Abstract

Keywords

ASJC Scopus subject areas

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