Thickness dependent electrical characteristics of AlGaN/GaN MOSHEMT with La2O3 gate dielectrics

J. Chen; K. Tsuneishi; K. Kakushima; P. Ahmet; Y. Kataoka; A. Nishiyama; N. Sugii; K. Tsutsui; K. Natori; T. Hattori; H. Iwai

doi:10.1149/05003.0353ecst

Thickness dependent electrical characteristics of AlGaN/GaN MOSHEMT with La₂O₃ gate dielectrics

J. Chen, K. Tsuneishi, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Thickness dependence of La₂O₃ gate dielectrics on electrical characteristics for AlGaN/GaN MOSHFET has been investigated. Positive shift in threshold voltage has been observed with thicker La₂O ₃ film thickness. Reduction in leakage current has obtained with thicker film.

Original language	English
Title of host publication	Gallium Nitride and Silicon Carbide Power Technologies 2
Publisher	Electrochemical Society Inc.
Pages	353-357
Number of pages	5
Edition	3
ISBN (Print)	9781607683513
DOIs	https://doi.org/10.1149/05003.0353ecst
Publication status	Published - 2013
Externally published	Yes
Event	2nd Symposium on Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Technologies - ECS Fall 2012 Meeting - Honolulu, HI, United States Duration: 2012 Oct 7 → 2012 Oct 12

Publication series

Name	ECS Transactions
Number	3
Volume	50
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	2nd Symposium on Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Technologies - ECS Fall 2012 Meeting
Country/Territory	United States
City	Honolulu, HI
Period	12/10/7 → 12/10/12

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/05003.0353ecst

Cite this

Chen, J., Tsuneishi, K., Kakushima, K., Ahmet, P., Kataoka, Y., Nishiyama, A., Sugii, N., Tsutsui, K., Natori, K., Hattori, T., & Iwai, H. (2013). Thickness dependent electrical characteristics of AlGaN/GaN MOSHEMT with La₂O₃ gate dielectrics. In Gallium Nitride and Silicon Carbide Power Technologies 2 (3 ed., pp. 353-357). (ECS Transactions; Vol. 50, No. 3). Electrochemical Society Inc.. https://doi.org/10.1149/05003.0353ecst

Thickness dependent electrical characteristics of AlGaN/GaN MOSHEMT with La₂O₃ gate dielectrics. / Chen, J.; Tsuneishi, K.; Kakushima, K. et al.

Gallium Nitride and Silicon Carbide Power Technologies 2. 3. ed. Electrochemical Society Inc., 2013. p. 353-357 (ECS Transactions; Vol. 50, No. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chen, J, Tsuneishi, K, Kakushima, K, Ahmet, P, Kataoka, Y, Nishiyama, A, Sugii, N, Tsutsui, K, Natori, K, Hattori, T & Iwai, H 2013, Thickness dependent electrical characteristics of AlGaN/GaN MOSHEMT with La₂O₃ gate dielectrics. in Gallium Nitride and Silicon Carbide Power Technologies 2. 3 edn, ECS Transactions, no. 3, vol. 50, Electrochemical Society Inc., pp. 353-357, 2nd Symposium on Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Technologies - ECS Fall 2012 Meeting, Honolulu, HI, United States, 12/10/7. https://doi.org/10.1149/05003.0353ecst

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abstract = "Thickness dependence of La2O3 gate dielectrics on electrical characteristics for AlGaN/GaN MOSHFET has been investigated. Positive shift in threshold voltage has been observed with thicker La2O 3 film thickness. Reduction in leakage current has obtained with thicker film.",

author = "J. Chen and K. Tsuneishi and K. Kakushima and P. Ahmet and Y. Kataoka and A. Nishiyama and N. Sugii and K. Tsutsui and K. Natori and T. Hattori and H. Iwai",

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