Thickness-dependent electronic structure of ultrathin SrRu O3 films studied by in situ photoemission spectroscopy

D. Toyota; I. Ohkubo; H. Kumigashira; M. Oshima; T. Ohnishi; M. Lippmaa; M. Takizawa; A. Fujimori; K. Ono; M. Kawasaki; H. Koinuma

doi:10.1063/1.2108123

Thickness-dependent electronic structure of ultrathin SrRu O₃ films studied by in situ photoemission spectroscopy

D. Toyota, I. Ohkubo, H. Kumigashira, M. Oshima, T. Ohnishi, M. Lippmaa, M. Takizawa, A. Fujimori, K. Ono, M. Kawasaki, H. Koinuma

IMRAM - Division of Inorganic Material Research

Research output: Contribution to journal › Article › peer-review

124 Citations (Scopus)

Abstract

In situ thickness-dependent photoemission spectroscopy (PES) has been performed on SrRu O3 (SRO) layers deposited on SrTi O3 substrates to study the structure-induced evolution of the electronic structure. The PES spectra showing the existence of two critical film thicknesses reveal that a metal-insulator transition occurs at a film thickness of 4-5 monolayers (ML) and the evolution of Ru 4d -derived states around the Fermi level (EF) saturates at about 15 ML. The observed spectral behavior well matches the electric and magnetic properties and thickness-dependent evolution of surface morphology of the ultrathin SRO films. These experimental results suggest the importance of the disorder associated with the unique growth-mode transition in SRO films.

Original language	English
Article number	162508
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	16
DOIs	https://doi.org/10.1063/1.2108123
Publication status	Published - 2005 Oct 17

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10.1063/1.2108123

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title = "Thickness-dependent electronic structure of ultrathin SrRu O3 films studied by in situ photoemission spectroscopy",

abstract = "In situ thickness-dependent photoemission spectroscopy (PES) has been performed on SrRu O3 (SRO) layers deposited on SrTi O3 substrates to study the structure-induced evolution of the electronic structure. The PES spectra showing the existence of two critical film thicknesses reveal that a metal-insulator transition occurs at a film thickness of 4-5 monolayers (ML) and the evolution of Ru 4d -derived states around the Fermi level (EF) saturates at about 15 ML. The observed spectral behavior well matches the electric and magnetic properties and thickness-dependent evolution of surface morphology of the ultrathin SRO films. These experimental results suggest the importance of the disorder associated with the unique growth-mode transition in SRO films.",

author = "D. Toyota and I. Ohkubo and H. Kumigashira and M. Oshima and T. Ohnishi and M. Lippmaa and M. Takizawa and A. Fujimori and K. Ono and M. Kawasaki and H. Koinuma",

note = "Funding Information: This work was done under Project No. 02S2-002 at the Institute of Materials Structure Science at KEK. This work was supported by a Grant-in-Aid for Scientific Research (A16204024 and S17101004) from the Japan Society for the Promotion of Science.",

year = "2005",

month = oct,

day = "17",

doi = "10.1063/1.2108123",

language = "English",

volume = "87",

pages = "1--3",

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T1 - Thickness-dependent electronic structure of ultrathin SrRu O3 films studied by in situ photoemission spectroscopy

AU - Toyota, D.

AU - Ohkubo, I.

AU - Kumigashira, H.

AU - Oshima, M.

AU - Ohnishi, T.

AU - Lippmaa, M.

AU - Takizawa, M.

AU - Fujimori, A.

AU - Ono, K.

AU - Kawasaki, M.

AU - Koinuma, H.

N1 - Funding Information: This work was done under Project No. 02S2-002 at the Institute of Materials Structure Science at KEK. This work was supported by a Grant-in-Aid for Scientific Research (A16204024 and S17101004) from the Japan Society for the Promotion of Science.

PY - 2005/10/17

Y1 - 2005/10/17

N2 - In situ thickness-dependent photoemission spectroscopy (PES) has been performed on SrRu O3 (SRO) layers deposited on SrTi O3 substrates to study the structure-induced evolution of the electronic structure. The PES spectra showing the existence of two critical film thicknesses reveal that a metal-insulator transition occurs at a film thickness of 4-5 monolayers (ML) and the evolution of Ru 4d -derived states around the Fermi level (EF) saturates at about 15 ML. The observed spectral behavior well matches the electric and magnetic properties and thickness-dependent evolution of surface morphology of the ultrathin SRO films. These experimental results suggest the importance of the disorder associated with the unique growth-mode transition in SRO films.

AB - In situ thickness-dependent photoemission spectroscopy (PES) has been performed on SrRu O3 (SRO) layers deposited on SrTi O3 substrates to study the structure-induced evolution of the electronic structure. The PES spectra showing the existence of two critical film thicknesses reveal that a metal-insulator transition occurs at a film thickness of 4-5 monolayers (ML) and the evolution of Ru 4d -derived states around the Fermi level (EF) saturates at about 15 ML. The observed spectral behavior well matches the electric and magnetic properties and thickness-dependent evolution of surface morphology of the ultrathin SRO films. These experimental results suggest the importance of the disorder associated with the unique growth-mode transition in SRO films.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

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ER -

Thickness-dependent electronic structure of ultrathin SrRu O₃ films studied by in situ photoemission spectroscopy

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