Thickness-dependent flat band potential of anatase TiO2(001) epitaxial films on Nb:SrTiO3(001) investigated by UHV-electrochemistry approach

Yuji Matsumoto; Yoshihiro Miura; Shintaro Takata

doi:10.1021/acs.jpcc.5b08708

Thickness-dependent flat band potential of anatase TiO₂(001) epitaxial films on Nb:SrTiO₃(001) investigated by UHV-electrochemistry approach

Yuji Matsumoto, Yoshihiro Miura, Shintaro Takata

ENG - Applied Chemistry

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

The semiconductor characteristics of anatase TiO₂(001) films, which were pulsed laser-deposited on a 0.05 wt % Nb-doped SrTiO₃(001) single crystal electrode, as well as the film/electrolyte heterointerfaces were investigated by the ultrahigh-vacuum electrochemistry approach. In addition to the current-voltage measurements, equivalent circuit modeling in electrochemical impedance spectroscopy at different electrode potentials reveals that the flat band potential of anatase TiO₂ films shifts by +0.5 V when the film thickness increases with (1 × 4) surface reconstruction more visible in reflection high energy electron diffraction. The possible origins of the observed flat band potential shift will be discussed from the viewpoint of electric double layer effects, mainly of donor-type surface states and surface reconstruction, compared with the results of single crystal rutile TiO₂(110).

Original language	English
Pages (from-to)	1472-1477
Number of pages	6
Journal	Journal of Physical Chemistry C
Volume	120
Issue number	3
DOIs	https://doi.org/10.1021/acs.jpcc.5b08708
Publication status	Published - 2016 Jan 28

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Energy(all)
Physical and Theoretical Chemistry
Surfaces, Coatings and Films

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10.1021/acs.jpcc.5b08708

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abstract = "The semiconductor characteristics of anatase TiO2(001) films, which were pulsed laser-deposited on a 0.05 wt % Nb-doped SrTiO3(001) single crystal electrode, as well as the film/electrolyte heterointerfaces were investigated by the ultrahigh-vacuum electrochemistry approach. In addition to the current-voltage measurements, equivalent circuit modeling in electrochemical impedance spectroscopy at different electrode potentials reveals that the flat band potential of anatase TiO2 films shifts by +0.5 V when the film thickness increases with (1 × 4) surface reconstruction more visible in reflection high energy electron diffraction. The possible origins of the observed flat band potential shift will be discussed from the viewpoint of electric double layer effects, mainly of donor-type surface states and surface reconstruction, compared with the results of single crystal rutile TiO2(110).",

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AU - Miura, Yoshihiro

AU - Takata, Shintaro

PY - 2016/1/28

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N2 - The semiconductor characteristics of anatase TiO2(001) films, which were pulsed laser-deposited on a 0.05 wt % Nb-doped SrTiO3(001) single crystal electrode, as well as the film/electrolyte heterointerfaces were investigated by the ultrahigh-vacuum electrochemistry approach. In addition to the current-voltage measurements, equivalent circuit modeling in electrochemical impedance spectroscopy at different electrode potentials reveals that the flat band potential of anatase TiO2 films shifts by +0.5 V when the film thickness increases with (1 × 4) surface reconstruction more visible in reflection high energy electron diffraction. The possible origins of the observed flat band potential shift will be discussed from the viewpoint of electric double layer effects, mainly of donor-type surface states and surface reconstruction, compared with the results of single crystal rutile TiO2(110).

AB - The semiconductor characteristics of anatase TiO2(001) films, which were pulsed laser-deposited on a 0.05 wt % Nb-doped SrTiO3(001) single crystal electrode, as well as the film/electrolyte heterointerfaces were investigated by the ultrahigh-vacuum electrochemistry approach. In addition to the current-voltage measurements, equivalent circuit modeling in electrochemical impedance spectroscopy at different electrode potentials reveals that the flat band potential of anatase TiO2 films shifts by +0.5 V when the film thickness increases with (1 × 4) surface reconstruction more visible in reflection high energy electron diffraction. The possible origins of the observed flat band potential shift will be discussed from the viewpoint of electric double layer effects, mainly of donor-type surface states and surface reconstruction, compared with the results of single crystal rutile TiO2(110).

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Thickness-dependent flat band potential of anatase TiO₂(001) epitaxial films on Nb:SrTiO₃(001) investigated by UHV-electrochemistry approach

Abstract

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