TY - GEN
T1 - Thickness Monitoring of nm Period EUV Multilayer Fabrication by Ellipsometry
AU - Tsuru, Toshihide
AU - Tsutou, Takashi
AU - Hatano, Tadashi
AU - Yamamoto, Masaki
N1 - Funding Information:
This work was partially supported by the Ministry of Education, Culture, Sports, Science and Technology, Grant-in-Aid for Exploratory Research, No. 14655022. The reflectance measurement has been performed under the approval of the Photon Factory Program Advisory Committee (Proposal No. 2001G214).
Publisher Copyright:
© 2004 American Institute of Physics.
PY - 2004/5/12
Y1 - 2004/5/12
N2 - We have adopted our new ellipsometer of picometer-thickness sensitivity for sputtering rate monitoring of extreme ultraviolet (EUV) multilayer fabrication. With real time thickness analysis during Mo/Si multilayer fabrication, the sputtering rates of Mo and Si were observed to be 0.9162nm/min and 4.752nm/min, respectively. EUV reflectance of this multilayer mirror was measured at the Photon Factory KEK and the period thickness was found to be 7.22nm. This period thickness is compared with an ellipsometric value of 6.98nm calculated by the final total thickness divided by the number of periods of 40. The difference of 3.3% can be attributed by a compound layer formation at every boundary of Mo and Si as observe by ellipsometry. The results proved good possibility of a single wavelength in-situ null ellipsometry for accurate and detailed controlling of the period thickness of EUV multilayer.
AB - We have adopted our new ellipsometer of picometer-thickness sensitivity for sputtering rate monitoring of extreme ultraviolet (EUV) multilayer fabrication. With real time thickness analysis during Mo/Si multilayer fabrication, the sputtering rates of Mo and Si were observed to be 0.9162nm/min and 4.752nm/min, respectively. EUV reflectance of this multilayer mirror was measured at the Photon Factory KEK and the period thickness was found to be 7.22nm. This period thickness is compared with an ellipsometric value of 6.98nm calculated by the final total thickness divided by the number of periods of 40. The difference of 3.3% can be attributed by a compound layer formation at every boundary of Mo and Si as observe by ellipsometry. The results proved good possibility of a single wavelength in-situ null ellipsometry for accurate and detailed controlling of the period thickness of EUV multilayer.
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U2 - 10.1063/1.1757900
DO - 10.1063/1.1757900
M3 - Conference contribution
AN - SCOPUS:85012267460
T3 - AIP Conference Proceedings
SP - 732
EP - 735
BT - Synchrotron Radiation Instrumentation
PB - American Institute of Physics Inc.
T2 - 8th International Conference on Synchrotron Radiation Instrumentation
Y2 - 25 August 2003 through 29 August 2003
ER -