Thin-beam bulk micromachining based on RIE and xenon difluoride silicon etching

Risaku Toda; Kazuyuki Minami; Masayoshi Esashi

doi:10.1016/S0924-4247(98)01701-4

Thin-beam bulk micromachining based on RIE and xenon difluoride silicon etching

Risaku Toda, Kazuyuki Minami, Masayoshi Esashi

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

A new process for fabricating thin mechanical beam structures from single-crystal silicon has been developed. Lateral and vertical dimensions of the beam can be precisely defined. The beam is positioned in the middle of a silicon wafer at exactly equal distances from both sides. The beam design is not limited by crystal orientations of silicon. The silicon beam structure is essentially stress free because the whole structure is made of uniformly doped single-crystal silicon. This thin-beam process offers significantly expanded design freedom to bulk silicon micromachining. Additionally, a silicon dioxide structure with very high aspect ratio has been fabricated with a similar technique.

Original language	English
Pages (from-to)	268-272
Number of pages	5
Journal	Sensors and Actuators, A: Physical
Volume	66
Issue number	1-3
DOIs	https://doi.org/10.1016/S0924-4247(98)01701-4
Publication status	Published - 1998 Apr 1
Externally published	Yes

Keywords

Bulk micromachining
Dry etch
High aspect ratio
Reactive ion etching
Three-dimensional structures
Xenon difluoride

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering

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10.1016/S0924-4247(98)01701-4

Cite this

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title = "Thin-beam bulk micromachining based on RIE and xenon difluoride silicon etching",

abstract = "A new process for fabricating thin mechanical beam structures from single-crystal silicon has been developed. Lateral and vertical dimensions of the beam can be precisely defined. The beam is positioned in the middle of a silicon wafer at exactly equal distances from both sides. The beam design is not limited by crystal orientations of silicon. The silicon beam structure is essentially stress free because the whole structure is made of uniformly doped single-crystal silicon. This thin-beam process offers significantly expanded design freedom to bulk silicon micromachining. Additionally, a silicon dioxide structure with very high aspect ratio has been fabricated with a similar technique.",

keywords = "Bulk micromachining, Dry etch, High aspect ratio, Reactive ion etching, Three-dimensional structures, Xenon difluoride",

author = "Risaku Toda and Kazuyuki Minami and Masayoshi Esashi",

note = "Funding Information: A part of this work was performed at the Venture Business Laboratory of Tohoku University. The authors would like to thank Professor K.S.J. Pister of the University of California, Los Angeles (presently at UC Berkeley) for helpful discussions. The authors also wi-sh to thank Sumitomo Precision Products Co. Ltd. for the STS ASE processing. This work was partly supported by the Japanese Ministry of Education Science, Sports and Culture under grant-in-aid No. 07555125. The authors also acknowledge the Electro-mechanic Technology Advancing Foundation for partial support of this research.",

year = "1998",

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doi = "10.1016/S0924-4247(98)01701-4",

language = "English",

volume = "66",

pages = "268--272",

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TY - JOUR

T1 - Thin-beam bulk micromachining based on RIE and xenon difluoride silicon etching

AU - Toda, Risaku

AU - Minami, Kazuyuki

AU - Esashi, Masayoshi

N1 - Funding Information: A part of this work was performed at the Venture Business Laboratory of Tohoku University. The authors would like to thank Professor K.S.J. Pister of the University of California, Los Angeles (presently at UC Berkeley) for helpful discussions. The authors also wi-sh to thank Sumitomo Precision Products Co. Ltd. for the STS ASE processing. This work was partly supported by the Japanese Ministry of Education Science, Sports and Culture under grant-in-aid No. 07555125. The authors also acknowledge the Electro-mechanic Technology Advancing Foundation for partial support of this research.

PY - 1998/4/1

Y1 - 1998/4/1

N2 - A new process for fabricating thin mechanical beam structures from single-crystal silicon has been developed. Lateral and vertical dimensions of the beam can be precisely defined. The beam is positioned in the middle of a silicon wafer at exactly equal distances from both sides. The beam design is not limited by crystal orientations of silicon. The silicon beam structure is essentially stress free because the whole structure is made of uniformly doped single-crystal silicon. This thin-beam process offers significantly expanded design freedom to bulk silicon micromachining. Additionally, a silicon dioxide structure with very high aspect ratio has been fabricated with a similar technique.

AB - A new process for fabricating thin mechanical beam structures from single-crystal silicon has been developed. Lateral and vertical dimensions of the beam can be precisely defined. The beam is positioned in the middle of a silicon wafer at exactly equal distances from both sides. The beam design is not limited by crystal orientations of silicon. The silicon beam structure is essentially stress free because the whole structure is made of uniformly doped single-crystal silicon. This thin-beam process offers significantly expanded design freedom to bulk silicon micromachining. Additionally, a silicon dioxide structure with very high aspect ratio has been fabricated with a similar technique.

KW - Bulk micromachining

KW - Dry etch

KW - High aspect ratio

KW - Reactive ion etching

KW - Three-dimensional structures

KW - Xenon difluoride

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DO - 10.1016/S0924-4247(98)01701-4

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SN - 0924-4247

VL - 66

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EP - 272

JO - Sensors and Actuators A: Physical

JF - Sensors and Actuators A: Physical

IS - 1-3

ER -

Thin-beam bulk micromachining based on RIE and xenon difluoride silicon etching

Abstract

Keywords

ASJC Scopus subject areas

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