Thin film characteristics and FET performances of β-octyl-substituted long oligothiophenes

Kazuo Takimiya; Katsuhiro Sakamoto; Tetsuo Otsubo; Yoshihito Kunugi

doi:10.1246/cl.2006.942

Thin film characteristics and FET performances of β-octyl-substituted long oligothiophenes

Kazuo Takimiya, Katsuhiro Sakamoto, Tetsuo Otsubo, Yoshihito Kunugi

SCI - Chemistry

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

A series of β-octyl-substituted oligothiophenes from 6-mer to 41-mer was examined for active layers of organic filed-effect transistors. Upon spin-coating from chloroform solution, the 20-mer and the longer oligomers formed homogenous thin films composed of stacked lamella structures. Top-contact devices fabricated using these films showed good p-channel FET characteristics with mobilities of 10 ^-3 cm ² V ^-1 s ^-1 which gradually increase with the extension of chain length.

Original language	English
Pages (from-to)	942-943
Number of pages	2
Journal	Chemistry Letters
Volume	35
Issue number	8
DOIs	https://doi.org/10.1246/cl.2006.942
Publication status	Published - 2006 Aug 5

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AU - Otsubo, Tetsuo

AU - Kunugi, Yoshihito

PY - 2006/8/5

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AB - A series of β-octyl-substituted oligothiophenes from 6-mer to 41-mer was examined for active layers of organic filed-effect transistors. Upon spin-coating from chloroform solution, the 20-mer and the longer oligomers formed homogenous thin films composed of stacked lamella structures. Top-contact devices fabricated using these films showed good p-channel FET characteristics with mobilities of 10 -3 cm 2 V -1 s -1 which gradually increase with the extension of chain length.

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Thin film characteristics and FET performances of β-octyl-substituted long oligothiophenes

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