TY - GEN
T1 - Thin film photodiode with resonant cavity for increasing signal of standing wave detection type interferometer
AU - Sasaki, M.
AU - Nakai, F.
AU - Mi, X.
AU - Hane, K.
N1 - Publisher Copyright:
© 2002 IEEE.
PY - 2002
Y1 - 2002
N2 - Laser interferometry is a well-developed and useful technique having advantages of high accuracy and non-contact measuring method. Many industrial instruments require small sensors having high accuracy and high-speed response. If the laser interferometer can be integrated in a small package meeting the requirements, there are large application areas. The interference signal from the new PD is rather generated by a convolution of two different resonant fields, not by the simple standing wave detection. The incoming light will be in resonance with Fabry-Perot cavity and large optical intensity is stored inside the Si sensing layer. The transmitted light is again back reflected from the reflection mirror, and also generates the resonance field in the Si layer. These two resonance fields interfere with each other resulting in the intensity modulation depending on the outer reflection mirror position.
AB - Laser interferometry is a well-developed and useful technique having advantages of high accuracy and non-contact measuring method. Many industrial instruments require small sensors having high accuracy and high-speed response. If the laser interferometer can be integrated in a small package meeting the requirements, there are large application areas. The interference signal from the new PD is rather generated by a convolution of two different resonant fields, not by the simple standing wave detection. The incoming light will be in resonance with Fabry-Perot cavity and large optical intensity is stored inside the Si sensing layer. The transmitted light is again back reflected from the reflection mirror, and also generates the resonance field in the Si layer. These two resonance fields interfere with each other resulting in the intensity modulation depending on the outer reflection mirror position.
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U2 - 10.1109/OMEMS.2002.1031426
DO - 10.1109/OMEMS.2002.1031426
M3 - Conference contribution
AN - SCOPUS:84963745133
T3 - 2002 IEEE/LEOS International Conference on Optical MEMs, OMEMS 2002 - Conference Digest
SP - 25
EP - 26
BT - 2002 IEEE/LEOS International Conference on Optical MEMs, OMEMS 2002 - Conference Digest
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - IEEE/LEOS International Conference on Optical MEMs, OMEMS 2002
Y2 - 20 August 2002 through 23 August 2002
ER -