Thin-film stabilization of LiNbO 3 -type ZnSnO 3 and MgSnO 3 by molecular-beam epitaxy

Kohei Fujiwara, Hiroya Minato, Junichi Shiogai, Akihito Kumamoto, Naoya Shibata, Atsushi Tsukazaki

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)


In polar crystals, cooperative ionic displacement produces a macroscopic spontaneous polarization. Among such polar materials, LiNbO 3 -type wide bandgap oxides are particularly appealing because they offer useful ferroelectric properties and also potentially lead to multiferroic materials. Using molecular-beam epitaxy, we investigated the thin-film growth of high-pressure phase LiNbO 3 -type ZnSnO 3 and discovered a polar oxide candidate, MgSnO 3 . We found that LiNbO 3 -type substrates play an essential role in the crystallization of these compounds, though corundum-type Al 2 O 3 substrates also have the identical crystallographic arrangement of oxygen sublattice. Optical transmittance and electrical transport measurements revealed their potential as a transparent conducting oxide. Establishment of a thin-film synthetic route would be the basis for exploration of functional polar oxides and research on conduction at ferroelectric interfaces and domain walls.

Original languageEnglish
Article number022505
JournalAPL Materials
Issue number2
Publication statusPublished - 2019 Feb 1


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