Thin solid lubricant film formation by fast atom bombardment sputter deposition

Hiroki Kuwano; Kazutoshi Nagai

doi:10.1116/1.573384

Thin solid lubricant film formation by fast atom bombardment sputter deposition

Hiroki Kuwano, Kazutoshi Nagai

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

A fast atom bombardment sputter deposition (FAB-SD) method is proposed for the formation of MOS₂solid lubricant films and to control their stoichiometry. In the FAB-SD process, the charging of targets is not a serious problem. The beams in a Mcllraithtype ion source are demonstrated to be capable of almost full neutralization. An Mo-S complex target is used for the purpose of stoichiometric control in the sputtering. Durability and friction coefficients of films deposited using this target are superior to those of films deposited using a conventional MoS₂target. The friction coefficient of the annealed film deposited using the Mo-S complex target is less than 0.05.

Original language	English
Pages (from-to)	1809-1812
Number of pages	4
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	3
Issue number	4
DOIs	https://doi.org/10.1116/1.573384
Publication status	Published - 1985 Jul
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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abstract = "A fast atom bombardment sputter deposition (FAB-SD) method is proposed for the formation of MOS2solid lubricant films and to control their stoichiometry. In the FAB-SD process, the charging of targets is not a serious problem. The beams in a Mcllraithtype ion source are demonstrated to be capable of almost full neutralization. An Mo-S complex target is used for the purpose of stoichiometric control in the sputtering. Durability and friction coefficients of films deposited using this target are superior to those of films deposited using a conventional MoS2target. The friction coefficient of the annealed film deposited using the Mo-S complex target is less than 0.05.",

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AU - Kuwano, Hiroki

AU - Nagai, Kazutoshi

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AB - A fast atom bombardment sputter deposition (FAB-SD) method is proposed for the formation of MOS2solid lubricant films and to control their stoichiometry. In the FAB-SD process, the charging of targets is not a serious problem. The beams in a Mcllraithtype ion source are demonstrated to be capable of almost full neutralization. An Mo-S complex target is used for the purpose of stoichiometric control in the sputtering. Durability and friction coefficients of films deposited using this target are superior to those of films deposited using a conventional MoS2target. The friction coefficient of the annealed film deposited using the Mo-S complex target is less than 0.05.

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Thin solid lubricant film formation by fast atom bombardment sputter deposition

Abstract

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