A fast atom bombardment sputter deposition (FAB-SD) method is proposed for the formation of MOS2solid lubricant films and to control their stoichiometry. In the FAB-SD process, the charging of targets is not a serious problem. The beams in a Mcllraithtype ion source are demonstrated to be capable of almost full neutralization. An Mo-S complex target is used for the purpose of stoichiometric control in the sputtering. Durability and friction coefficients of films deposited using this target are superior to those of films deposited using a conventional MoS2target. The friction coefficient of the annealed film deposited using the Mo-S complex target is less than 0.05.
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|Publication status||Published - 1985 Jul|
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films