TY - JOUR
T1 - Three-dimensional analysis of dislocation multiplication in single-crystal silicon under accurate control of cooling history of temperature
AU - Gao, B.
AU - Kakimoto, K.
N1 - Funding Information:
This work was partly supported by the New Energy and Industrial Technology Development Organization (NEDO) under the Ministry of Economy, Trade and Industry (METI) .
PY - 2014/6/15
Y1 - 2014/6/15
N2 - Dislocation multiplication in single-crystal silicon during heating and cooling processes was studied by three-dimensional simulation under accurate control of the temperature history. Three different cooling temperature histories were designed. The results showed that the cooling rate in the high-temperature region has a large effect on the final dislocations and residual stress. The most effective method to reduce dislocations is to use a slow cooling rate in the high-temperature region.
AB - Dislocation multiplication in single-crystal silicon during heating and cooling processes was studied by three-dimensional simulation under accurate control of the temperature history. Three different cooling temperature histories were designed. The results showed that the cooling rate in the high-temperature region has a large effect on the final dislocations and residual stress. The most effective method to reduce dislocations is to use a slow cooling rate in the high-temperature region.
KW - A1. Computer simulation
KW - A1. Line defects
KW - A1. Stresses
KW - A2. Growth from melt
KW - B2. Semiconducting silicon
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U2 - 10.1016/j.jcrysgro.2014.03.034
DO - 10.1016/j.jcrysgro.2014.03.034
M3 - Article
AN - SCOPUS:84898069471
SN - 0022-0248
VL - 396
SP - 7
EP - 13
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
ER -